Benjamin Sahan, Samuel V. Araújo, Thomas Kirstein, Lucas Menezes, Peter Zacharias
Kompetenzzentrum für Dezentrale Elektrische Energieversorgungstechnik (KDEE),
University of Kassel, Wilhelmshöher Allee 71, D-34121 Kassel, b.sahan@uni-kassel.de
Abstract
SiC semiconductors offer very interesting characteristics and can be considered as a future trend in
photovoltaic converter technology. The vertical JFET is an example of a very promising device, mainly
due to its relative structural simplicity. Nevertheless, its inherent normally-on characteristic calls for
specially tailored topologies that will be presented and discussed in this publication.
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