“SE SEUS PROJETOS FOREM PARA UM ANO,SEMEIE O GRÂO.SE FOREM PARA DEZ ANOS,PLANTE UMA ÁRVORE.SE FOREM PARA CEM ANOS,EDUQUE O POVO.”

“Sixty years ago I knew everything; now I know nothing; education is a progressive discovery of our own ignorance. Will Durant”

OBRIGADO DEUS PELA VIDA,PROTEGENOS E GUARDANOS DE TODO MAL


AUTOR DO BLOG ENG. ARMANDO CAVERO MIRANDA SAO PAULO BRASIL

sexta-feira, 17 de dezembro de 2010

CIENTIFICO PERUANO EN LA UNIVERSIDAD DE STADFORD



Fernando Ponce
Professor
Ph.D., Stanford University
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Home Department - Physics
Areas of Study - Wide-gap semiconductors for applications in solid state lighting and photovoltaics
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Office - PSF 334
Phone - 480-965-5557
E-mail - ponce@asu.edu

Background
Prof. Ponce’s research group is involved in the study of the microscopic properties of semiconductors materials. The atomic arrangement at extended defects (dislocations) and interfaces is analyzed using lattice-imaging techniques (transmission electron microscopy) with resolutions below 0.2nm, and diffraction contrast imaging techniques. The electronic properties are studied using electron beam induced current imaging. Variations of the electrostatic potential are measured using electron holography in the transmission electron microscopy. Optical transitions are observed using cathodoluminescence spectroscopic imaging.

An important area of interest is the physics of nitride semiconductors. These are GaN-based materials used in light emitting devices, and include InGaN and AlGaN alloys used for visible and ultraviolet LEDs and laser diodes. This research is being supported by the Department of Energy, Nichia Corporation, and the VIGIL Program of DARPA.

Selected PublicationsQ. Y. Wei, Z. H. Wu, K. W. Sun, F. A. Ponce, J. Hertkorn, and F. Scholz (2009). Evidence of two-dimensional hole gas in p-type AlN/GaN heterostructures. Applied Physics Express, 27 November 2009, Vol. 2, 121001.

F. A. Ponce, Z. H. Wu, Q. Y. Wei, H. D. Fonseca-Filho, C. M. Almeida, R. Prioli and D. Cherns (2009). Nanoscale dislocation patterning by scratching in an atomic force microscope. Journal of Applied Physics, 15 October 2009, Vol. 106, 076106.

J. N. Dai, X. H. Wu, C. H. Yu, Q. Zhang, Y. Q. Sun, Y. K. Xiong, X. Y. Han, L. Z. Tong, Q. H. He, F. A. Ponce, and C. Q. Chen (2009). Comparative study on MOCVD growth of a-plane GaN films on r-plane sapphire substrates using GaN, AlGaN, and AlN buffer layers. Journal of Electronic Materials, September 2009, Vol. 38, pp. 1938-1943.

J. Hertkorn, S. B. Thapa, T. Wunderer, F. Scholz, M. A. Moram and C. J. Humphreys, C. Vierheilig, and U. T. Schwarz (2009). Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multi-heterostructures grown by MOVPE. Journal of Applied Physics, 14 July 2009, Vol. 106, 013720.

FULL PUBLICATIONS :http://physics.asu.edu/people/faculty

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