MERRY CHRISTMAS FELIZ NATAL FELIZ NAVIDAD

MERRY CHRISTMAS FELIZ NATAL FELIZ NAVIDAD

“SE SEUS PROJETOS FOREM PARA UM ANO,SEMEIE O GRÂO.SE FOREM PARA DEZ ANOS,PLANTE UMA ÁRVORE.SE FOREM PARA CEM ANOS,EDUQUE O POVO.”

“Sixty years ago I knew everything; now I know nothing; education is a progressive discovery of our own ignorance. Will Durant”

JORGE CHAVEZ DARTNELL SEPTIEMBRE 1910 "Higher always higher, until we reach the glory"


SAO PAULO BRASIL

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domingo, 26 de setembro de 2010

THE DEEP DARK SECRETS OF MOSFETS- OS SEGREDOS OSCUROS E PROFUNDOS DOS MOSFETS




THE DEEP DARK SECRETS OF MOSFETS-Los secretos oscuros y profundos de los mosfets.
The Applied Power Electronics Conference and Exposition-2010 Special Presentations -APEC 2010
Tuesday, February 23, 2010; 8:30 AM - Noon
Session SP2.1 - Industrial
Session Chair: John Jovalusky, Qspeed

SP2.1.7
Deep Dark Secrets of MOSFETs P. Schimel, International Rectifier, El Segundo, CA




sábado, 25 de setembro de 2010

Energia solar e eólica podem encerrar era do petróleo, diz Nobel

Energia solar e eólica podem encerrar era do petróleo, diz NobelInovação Tecnológica
Publicado em 24 de Setembro de 2010

A continuidade da pesquisa e desenvolvimento no campo das energias alternativas poderá resultar em uma nova era na história humana, em que duas fontes de energia renovável - a energia solar e a energia eólica - vão se tornar as principais fontes de energia na Terra. A opinião contundente não é de nenhum ambientalista de plantão, mas do Prêmio Nobel de Química de 1998, Walter Kohn. Falando a uma plateia seleta na Sociedade Americana de Química, Kohn destacou que petróleo e gás natural abastecem hoje cerca de 60 por cento do consumo global de energia. Para ele, essa tendência deverá crescer ainda por um período de 10 a 30 anos, seguindo-se um rápido declínio no consumo de combustíveis fósseis. Desafios energéticos "Essas tendências têm criado dois desafios sem precedentes em nível global," disse Kohn. "Um é a ameaça global de escassez de energia, o que é até aceitável. O outro é o perigo iminente, este inaceitável, do aquecimento global e suas consequências." Kohn observou que estes desafios exigem uma ampla variedade de respostas. "A mais óbvia é a continuidade do progresso científico e tecnológico, criando fontes alternativas de energia que sejam abundantes, acessíveis, seguras, limpas e livres de carbono," disse ele. Como os desafios são globais por natureza, o trabalho científico e tecnológico deverá ter um máximo de cooperação internacional, que felizmente está começando a evoluir, disse ele. Era do Sol/Vento Na última década, a produção mundial de energia fotovoltaica multiplicou-se por um fator de 90, e a energia eólica por um fator de cerca de 10. Kohn espera a continuidade do crescimento vigoroso dessas duas energias efetivamente inesgotáveis durante a próxima década e além, levando assim a uma nova era, a "era do Sol/Vento", como ele chama, substituindo a era do petróleo. Outra questão importante, segundo ele, que compete principalmente aos países desenvolvidos, cuja população praticamente se estabilizou, é a redução no consumo de energia per capita. "Um exemplo marcante disso é o consumo per capita de gasolina nos Estados Unidos, cerca de 5 vezes superior à média global", disse ele. "O mundo menos desenvolvido, compreensivelmente, pretende trazer seu padrão de vida a um nível semelhante ao dos países altamente desenvolvidos; em contrapartida, eles devem estabilizar suas populações crescentes."
FONTE:http://www.iengenharia.org.br/site/noticia.php?id_sessao=4&id_noticia=4407

quarta-feira, 22 de setembro de 2010

600/1200V IGBTs Set Benchmark Performance in High Switching Speed Applications


600/1200V IGBTs Set Benchmark Performance in High Switching Speed Applications

The third generation of high speed IGBTs from Infineon Technologies (H3) in the voltage class 600V and 1200V are optimised for high speed switching in welding, UPS, SMPS and Solar applications. The new devices show excellent dynamic behaviour, smooth switching and significant loss reduction, providing the system designers with a cost-effective solution to meet today’s stringent requirements of energy efficiency regulations and simplify the system design by reduction of cooling and filtering efforts. Davide Chiola and
Holger Hüsken, IGBT Application Engineering and IGBT Technology Development, Infineon
Technologies, Austria/Germany
FULL PAPER HERE:http://www.4shared.com/document/1Isct0m_/IGBTNOVO.html

Integrated Gate Driver Circuit Solutions


Integrated Gate Driver Circuit Solutions

Issue 5 2010 Power Electronics Europe www.power-mag.com Power electronics systems are commonly used in motor drive, power supply and power conversion applications. They cover a wide output power spectrum: from several hundred watts in small drives up to megawatts in wind-power installations or large drive systems. Inside the system the gate driver circuit with
its extensive control and monitoring functions forms the interface between the microcontroller and the power switches (IGBT). This article provides an overview of different gate driver topologies for different power ranges and shows examples for monolithic integration of the driver functionality. R. Herzer, J.Lehmann, M. Rossberg, B. Vogler, SEMIKRON Elektronik, Nuremberg, Germany.

FULL PAPER HERE:http://www.4shared.com/document/ksGyFDcs/IGBTDRIVER.html

quinta-feira, 9 de setembro de 2010

terça-feira, 7 de setembro de 2010

Distributed Generation-The case for Power Electronics


Distributed Generation -
Partha Sarathi Sensarma
Department of Electrical Engineering
IIT Kanpur
The case for Power Electronics

FULL PAPER HERE: http://www.nampet.org/event_efiles/report_42.zip

HEATSINK CONCEPS AND CASE STUDIES


HEATSINK CONCEPS AND CASE STUDIES
G.DhanushKodi
Scientist 'C', SAMEER,Chennai
FULL PAPER HERE:http://www.nampet.org/event_efiles/report_23.zip

Design and Implementation of Parallel Operation of Inverters


Design and Implementation of Parallel Operation of
Inverters with Instantaneous Current Sharing Scheme
Using Multiloop Control Strategy on FPGA Platform

A thesis submitted in partial ful llment of the requirements
for the degree of Master of Technology by Shahil Shah
to the
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
July 2008.

The content of this thesis find it on the websites:http://www.nampet.org/Nampet/files2009/shahil_report.pdf

or : http://www.4shared.com/document/7wEeKINJ/shahil.html

segunda-feira, 6 de setembro de 2010

Dynamic Voltage Regulator

Dynamic Voltage Regulator
Static Voltage Stabilizer (or Dynamic Voltage Regulator DVR) developed by MEDI is a direct conversion AC-AC SMPS which will give a 220V constant AC output from an unregulated AC input 90-270V.

Interfacing back to back SCRs to microcontroller

Interfacing back to back SCRs to microcontroller

Mosfet_or_IGBT_Driver IC 2101.avi

Mosfet_or_IGBT_Driver IC 2101.avi
Driving a mosfet or an IGBT in a half bridge configuration requires a driver as the top mosfet or IGBT has to get the DC supply from an isolated source.Understanding its use helps writting its input program and output use for inverters ,converters erc
.

Energy Efficiency in India: Challenges and Initiatives

Energy Efficiency in India: Challenges and Initiatives
BerkeleyLab 20 de maio de 2010
May 13, 2010 EETD Distinguished Lecture: Ajay Mathur is Director General of the Bureau of Energy Efficiency, and a member of the Prime Minister's Council on Climate Change. As Director General of BEE, Dr. Mathur coordinates the national energy efficiency programme, including the standards and labeling programme for equipment and appliances; the energy conservation building code; the industrial energy efficiency programme, and the DSM programmes in the buildings, lighting, and municipal sectors.

How to Bring Solar Energy to Seven Billion People

How to Bring Solar Energy to Seven Billion People-COMO TRAER ENERGIA SOLAR PARA 7 BILLONES DE PERSONAS .

PALESTRA INTERESANTE DO BERKELEY LAB,EL ARTIGO COMPLETO LO ENCUENTRAS EN EL SITE:http://www.rdmag.com/Multimedia/Video/2010/05/energy-how-to-bring-solar-energy-to-seven-billion-people/

domingo, 5 de setembro de 2010

PCIM 2010 EUROPE ON VIDEO

PCIM Europe 2010 Video Archive Now Online
From May 4 through 6, Techcast was at the Power Conversion Intelligent Motion (PCIM) Europe 2010 trade show in Nuremberg to record 70 presentations. Online access to the video archive for this international exhibition and conference is now available immediately for a fee.
http://www.techcast.com/en/news/20/62/PCIM-Europe-2010-Video-Archive-Now-Online/

video

sábado, 4 de setembro de 2010

SiC Power Module



The High-temperature SiC Power Module was first marketed via a public press
release and floor demonstration at CEATEC 2008 (Combined Exhibition of
Advanced Technologies), Japan’s premiere electronics trade show. CEATEC took
place September 30–October 4, 2008, in Makuhari, Japan.



Product’s Primary Function
Power electronics modules are the core components of all power electronics
systems. In essence, power electronics systems convert electrical energy from
one form (provided by a source) into another form (consumed by a load). They are
required to drive electric motors (such as those for electric and hybrid vehicles),
convert energy from renewable sources (i.e., solar arrays or wind generators), and
provide power for a wide variety of electronics and electronic systems (DC power
supplies and inverters).
With applications in hybrid and electric vehicles, renewable energy interfaces,
and more-electric aircraft, it reduces size and volume of power electronic
systems by an order of magnitude over present state-of-the-art silicon-based
solutions while simultaneously reducing energy loss by greater than 50 percent and
offering the potential to save $100s of millions.
Our team’s high-temperature silicon carbide power module is the world’s first
commercial high-temperature (250°C) silicon carbide-based power electronics
module. The 50 kW (kilowatt) (1200 V (volt) /150 A (ampere) peak) silicon carbide
(SiC) power modules are rated up to 250°C junction temperature and integrate
high-temperature gate drivers.
Figure 9.1. Exploded view of the high-temperature SiC half-bridge power module.