Seminar 1 IGBT Gate Drive Technologies

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Seminar

Seminar 1 IGBT Gate Drive Technologies

Schedule

Tuesday, 11.09.2012, 09:00 - 12:30 hrs

Speaker

Reinhard Herzer, Semikron Eletronik GmbH & Co.KG, Germany

		Reinhard Herzer studied Electrical Engineering and received 1984 his PhD in the field of Microelectronics and 1992 his Habilitation in the field of Power Devices and Smart Power ICs from the Ilmenau Technical University. He joined Semikron Electronics Nuremberg, Germany in 1995 as head of the MOSFET, IGBT and IC research department. Here he is responsible for the introduction of new power device generations as well as driver- and sensor- IC in new power modules and systems. Further he is Associated Professor at the Technical University of Ilmenau were he teaches and coaches students and PhD students.

Language

English

Description

Fundamentals- Power control system
- Inverter principle, frequency inverter
- Methods of potential separation
IGBT devices
- Physical basics, parameter and characteristics
- Switching behaviour, switching times and losses
Driver fundamentals
- Gate driver topologies
- Transmission principles of control signal and driving energy
- Galvanic isolation and level shift
- Variants of power supply: DC/DC converter, bootstrap power supply
- Gate driving technologies and different gate drive circuits
Protection techniques- Under voltage protection
- Short pulse suppression and interlock
- Different kinds of short circuit protection
- Hard and soft turn-off
Calculation and selection of drivers
- Information and parameters, e.g. gate charge, frequency output voltage and current
Using IGBT drivers
- Input and output signals, VCE-diode
- Dimensioning and design of gate resistors
- Gate Clamping
- Some questions of system design
Overview about available gate drivers- Hybrid driver
- Integrated driver IC