Chun-Chieh Tseng* Chia-Hsiung Kao**
A new equivalent circuit model for IGBT is presented. It takes into account both
electron and hole conduction in sensors and is incorporated with SPICE3 for the
simulation of three types of current sensors, namely active, bipolar, and MOS sensors.
It adopts a multi-MOS model to include the doping variation in the MOS body. The
results agree well with the current sensing measurements within an average error of