quarta-feira, 2 de fevereiro de 2011
Understanding Graphene and Graphene Nanostructures
Understanding Graphene and Graphene Nanostructures
Exploring Magnetism with Ferromagnetic III-V Semiconductors
2010/5/30 Osaka,G-COE Exploring Magnetism with Ferromagnetic III-V Semiconductors , H.Ohno , Tohoku University
Creating Electronic Devices with New Functions...:Hamaya Laboratory
Creating Electronic Devices with New Functions...:Hamaya Laboratory
EEVblog #139 - Let's Select a DC-DC Boost Converter
EEVblog #139 - Let's Select a DC-DC Boost Converter
Einstein's General Theory of Relativity | Lecture 1
Einstein's General Theory of Relativity | Lecture 1
Lecture 1 of Leonard Susskind's Modern Physics concentrating on General Relativity. Recorded September 22, 2008 at Stanford University.
This Stanford Continuing Studies course is the fourth of a six-quarter sequence of classes exploring the essential theoretical foundations of modern physics. The topics covered in this course focus on classical mechanics. Leonard Susskind is the Felix Bloch Professor of Physics at Stanford University.
Lecture 1 of Leonard Susskind's Modern Physics concentrating on General Relativity. Recorded September 22, 2008 at Stanford University.
This Stanford Continuing Studies course is the fourth of a six-quarter sequence of classes exploring the essential theoretical foundations of modern physics. The topics covered in this course focus on classical mechanics. Leonard Susskind is the Felix Bloch Professor of Physics at Stanford University.
sexta-feira, 28 de janeiro de 2011
A Novel Driving and Protection Circuit for Reverse-Blocking IGBT Used in Matrix Converter
A Novel Driving and Protection Circuit for
Reverse-Blocking IGBT Used in Matrix Converter
Daning Zhou, Kai Sun, Student Member, IEEE, Zhichao Liu, Lipei Huang,
Kouki Matsuse, Fellow, IEEE, and Kiyoaki Sasagawa
D. Zhou, K. Sun, Z. Liu, and L. Huang are with the Department
of Electrical Engineering, Tsinghua University, Beijing 100084, China
(e-mail: zhoudn02@mails.tsinghua.edu.cn; sun-kai@mail.tsinghua.edu.cn;
liuzhichao@tsinghua.org.cn; huanglipei@mail.tsinghua.edu.cn).
K. Matsuse is with the Department of Electrical and Electronic Engineering,
Meiji University, Kawasaki 214-8571, Japan (e-mail: matsuse@isc.meiji.ac.jp).
K. Sasagawa is with the Electronics Technology Laboratory, Fuji Electric
Advanced Technology Company, Ltd., Tokyo 191-8502, Japan (e-mail:
sasagawa-kiyoaki@fujielectric.co.
Reverse-Blocking IGBT Used in Matrix Converter
Daning Zhou, Kai Sun, Student Member, IEEE, Zhichao Liu, Lipei Huang,
Kouki Matsuse, Fellow, IEEE, and Kiyoaki Sasagawa
D. Zhou, K. Sun, Z. Liu, and L. Huang are with the Department
of Electrical Engineering, Tsinghua University, Beijing 100084, China
(e-mail: zhoudn02@mails.tsinghua.edu.cn; sun-kai@mail.tsinghua.edu.cn;
liuzhichao@tsinghua.org.cn; huanglipei@mail.tsinghua.edu.cn).
K. Matsuse is with the Department of Electrical and Electronic Engineering,
Meiji University, Kawasaki 214-8571, Japan (e-mail: matsuse@isc.meiji.ac.jp).
K. Sasagawa is with the Electronics Technology Laboratory, Fuji Electric
Advanced Technology Company, Ltd., Tokyo 191-8502, Japan (e-mail:
sasagawa-kiyoaki@fujielectric.co.
quarta-feira, 26 de janeiro de 2011
Energy Efficient Transistors
VIDEOLECTURES.NET
Energy Efficient Transistors
author:Alan Seabaugh, University of Notre Dame
published: Oct. 24, 2007, recorded: October 2007
Energy Efficient Transistors
Alan Seabaugh
Energy Efficient Transistors
author:Alan Seabaugh, University of Notre Dame
published: Oct. 24, 2007, recorded: October 2007
Energy Efficient Transistors
Alan Seabaugh
sábado, 22 de janeiro de 2011
Assinar:
Postagens (Atom)