AUTOR DO BLOG ENG.ARMANDO CAVERO MIRANDA SÃO PAULO BRASIL

GIF 1 GIF 2

“GRAÇAS A DEUS PELA VIDA,PELA MINHA FAMÍLIA,PELO TRABALHO.PELO PÃO DE CADA DIA,POR NOS PROTEGER DO MAL”

“SE SEUS PROJETOS FOREM PARA UM ANO,SEMEIE O GRÂO.SE FOREM PARA DEZ ANOS,PLANTE UMA ÁRVORE.SE FOREM PARA CEM ANOS,EDUQUE O POVO”

https://picasion.com/
https://picasion.com/



segunda-feira, 12 de outubro de 2026

Alguns aspectos da investigação sobre a viabilidade da construção de uma usina nuclear na Lua-V.V. Belov, S.A. Sazonova-Некоторые аспекты исследования возможности строительства АЭС на Луне-Vyacheslav V. Belov , Svetlana A. Sazonova


Alguns aspectos da investigação sobre a viabilidade da construção de uma usina nuclear na Lua V.V. Belov, S.A. Sazonova ✉ Universidade Estadual de Engenharia Civil de Moscou (NRU MGSU), Moscou, Federação Russa

 Resumo. A exploração espacial é uma prioridade para o desenvolvimento de qualquer grande nação, uma vez que enfrentar os desafios tecnológicos associados impulsiona o progresso futuro. Claramente, tal exploração é impossível sem o estabelecimento de uma fonte de energia confiável diretamente no espaço. Este estudo concentra-se em uma análise conceitual da viabilidade de construir uma usina nuclear (UN) estacionária na Lua. Foi realizada uma revisão de informações de fontes abertas para identificar sistemas de energia nuclear existentes ou em desenvolvimento, capazes de operar sob "condições lunares" e, ao mesmo tempo, atender aos requisitos de segurança e descarte. Além disso, foram selecionados modelos específicos de veículos lançadores das classes pesada e superpesada (tanto existentes quanto conceituais) capazes de transportar cargas úteis de 10 toneladas ou mais para a Lua. Com base na análise de dados de sistemas de reatores e informações sobre as condições de operação e construção na Lua, desenvolveu-se um projeto conceitual de uma estrutura de contenção "reutilizável" para uma UN lunar estacionária; essa estrutura serve para fornecer proteção contra a queda de corpos celestes, flutuações de radiação e radiação solar (calor solar). São apresentados os conceitos fundamentais relativos às etapas de construção, operação e descomissionamento, destacando-se as questões associadas à criação, ao desenvolvimento e ao descarte de instalações nucleares e estruturas de contenção de UNs estacionárias em um ambiente sem atmosfera (como em um corpo celeste) — questões que existem atualmente e requerem pesquisa ao longo da próxima década.

O TEXTO ORIGINAL ESTA EM IDIOMA RUSSO FOI TRADUZIDO AO PORTUGUÊS NESTE LINK 

DOWNLOAD LINK : https://www.mediafire.com/file/pasvvn1xjgc3tyt/Alguns+aspectos+da+investigação+sobre+a+viabilidade+da+construção+de+uma+usina+nuclear+na+Lua.pdf/file

High voltage semiconductor voltage pulse generator for capillary discharge formation in soft X- ray radiation source Andrey A. Samokhvalova,b , Kirill A. Sergushichevb , Stepan I. Eliseevb,c , Artyom A. Smirnovb ✉, Maria V. Timshinab , Timur P. Bronzovb a Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, Saint-Petersburg, Russian Federation


 


High"voltage semiconductor voltage pulse generator for capillary discharge formation in soft X"ray radiation source Andrey A. Samokhvalova,b , Kirill A. Sergushichevb , Stepan I. Eliseevb,c , Artyom A. Smirnovb ✉, Maria V. Timshinab , Timur P. Bronzovb 

 Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, Saint-Petersburg, Russian Federation b «Laboratory V.A. Burtseva» LLC, Saint-Petersburg, Russian Federation c St. Petersburg State University, Saint-Petersburg, Russian Federation

 Abstract. The results of the development of a high-voltage semiconductor voltage generator (based on IGBT transistors) with a pulse transformer and the results of experiments on generating a capillary discharge using it on a compact gas-discharge source capable of generating pulses of soft X-ray radiation (SXR) in the area of the socalled «water window» — with wavelength in the range of 2.4...4.4 nm. Methods for designing a high-voltage pulse voltage pulse generator are described: theoretical calculations and results of modeling the electrical circuit diagram in the LTSpice software package, the developed design of a pulse transformer based on N87 ring ferrites and the generator itself is described, the results of its operation as part of a compact gas-discharge radiation source are presented and analyzed. The prospects of using such a high-voltage generator (with semiconductor transistor switches) with a pulse transformer as part of a soft X-ray radiation source are shown due to its technical and operational features: the developed generator is capable of operating from an alternating current network of 380 V/50 Hz in a frequency-burst mode (with a repetition rate of the generated voltage pulses up to 600 Hz) and charges the capillary capacitance of the SXR source to a voltage of more than 20 kV in a time of about 4 μs, has small dimensions, does not create pulsed high-frequency interference and false alarms, and also has stable output (amplitude-temporary) parameters.

ORIGINAL RUSSIAN LANGUAGE:https://journals.rudn.ru/engineering-researches/article/download/37372/22992

 TRANSLATED FROM RUSSIAN TO ENGLISH :https://www.mediafire.com/file/704heq0czec2pcj/Highvoltage+semiconductor+voltage+pulse+generator-ENGLISH.pdf/file

INSTRUMENTS AND METHODS OF INVESTIGATION PACS - Physical principles of filtration and the design of terahertz radiation filters A.K. Kaveev, G.I. Kropotov-Uspekhi Fizicheskikh Nauk, Russian Academy of Sciences


 

Physical principles of filtration and the design of terahertz radiation filters 

 Contents
1. Introduction 169
2. Basic physical principles of THz radiation filtering 170
2.1 Filtration of THz radiation in absorbing layers; 2.2 Filtering of THz radiation using metamaterials
3. THz filters based on absorbing materials 175
3.1 Spectral studies of materials for fabricating THz cutoff filters; 3.2 Cutoff filters
4. THz filters based on metamaterials 177
4.1 Geometries and equivalent circuits of FSSs used as real THz filters; 4.2 THz notch filters; 4.3 Filters based on
resonant switching by photoexcitation; 4.4 THz high-pass filters; 4.5 Technologies for manufacturing metamaterials
for THz filters and other FSS-based passive optical elements
5. THz polarization filters 183
6. THz plasmonic Filters 184
7. Exotic THz filter 184
8. Conclusions 186
References

 Abstract. Present review examines the basic physical principles of operation of terahertz radiation filters. The main types of filters are presented, namely, based on absorbing/scattering materials, metamaterials (frequency-selective surfaces), interference, polar- ization, and some exotic types. The basic principles of calculating the filters transmission based on matrix methods are described, as well as based on solving Maxwell's equations. The areas of application of THz filters are listed. 

FULL PAPER : LINK1 :https://ufn.ru/ufn2026/ufn2026_2/ufn262e.pdf

LINK2 : https://www.mediafire.com/file/nj0pxmeqw6wlyx9/Physical+principles+of+filtration+and+the+design+of+terahertz+radiation.pdf/file 

sexta-feira, 9 de outubro de 2026

TESTE PLACA CARREGADOR DE BATERIAS UPS ONLINE 2KVA -6 BATERIAS DE 12VDC


 

THE IGBT TEST SETUP DESIGN Master Thesis By Kun Liu Abdirahman Hirsi-Division of Electric Power Engineering Department of Energy and Environment CHALMERS UNIVERSITY OF TECHNOLOGY


 

THE IGBT TEST SETUP DESIGN Master Thesis By Kun Liu Abdirahman Hirsi-Division of Electric Power Engineering Department of Energy and Environment CHALMERS UNIVERSITY OF TECHNOLOGY-Gothenburg, Sweden 2008 

Abstract 

An experimental half bridge converter setup is designed in order to explore the switching characteristics and losses of a new type of IGBT module. A specific digital control circuit and a drive circuit for an IGBT are designed and integrated into one PCB which can provide different kinds of precise IGBT gate signals. The switching characteristics and losses are investigated under different parameters both in a hardware and a simulation. It can be observed that the switching losses are increasing with the increase of voltage and current levels. Increasing the gate resistance also tends to increase the IGBT switching losses, while the reverse recovery losses of the free-wheeling diode decrease. The switching characteristics of the IGBT are not affected by temperature, but the reverse recovery losses increase with the temperature. The stray inductance has a negative effect, since it causes the oscillation both in the voltage and current waveforms.

 LINK1 : https://www.mediafire.com/file/dpy9vooyx34f23h/IGBT-THESIS.pdf/file

LINK2: https://mega.nz/file/BMFXHRKJ#7gVHFUzX568UFvwuPZWM4YL5t0X-JcTThyXNjN7WBcE