AUTOR DO BLOG ENG.ARMANDO CAVERO MIRANDA SÃO PAULO BRASIL

"OBRIGADO DEUS PELA VIDA,PELA MINHA FAMILIA,PELO TRABALHO,PELO PÃO DE CADA DIA,PROTEGENOS DO MAL"

"OBRIGADO DEUS PELA VIDA,PELA MINHA FAMILIA,PELO TRABALHO,PELO PÃO DE CADA DIA,PROTEGENOS  DO MAL"

“SE SEUS PROJETOS FOREM PARA UM ANO,SEMEIE O GRÂO.SE FOREM PARA DEZ ANOS,PLANTE UMA ÁRVORE.SE FOREM PARA CEM ANOS,EDUQUE O POVO.”

“Sixty years ago I knew everything; now I know nothing; education is a progressive discovery of our own ignorance. Will Durant”

quinta-feira, 27 de abril de 2017

INFINEON HIGH POWER SEMINARIO TECNICO -TCT-ARTIMAR- SÃO PAULO BRASIL


Eng.Tiago Gomez da Silva (SMS LEGRAND-BRASIL) Eng. Armando Cavero Miranda (PERU) e Eng.David Levett Power Electronics Engineer at Infineon INFINEON HIGH POWER SEMINARIO TECNICO -TCT-ARTIMAR-27 abril - SÃO PAULO BRASIL













INFINEON HIGH POWER SEMINARIO TECNICO -TCT-ARTIMAR-27 ABRIL 2017 SÃO PAULO BRASIL 
 Foi realizado com muito sucesso hoje em São Paulo, o primeiro seminário técnico da divisão IPC (Industrial Power Control) da Infineon no Brasil. A TCT Brasil foi um dos organizadores do evento, que contou com a participação de diversos engenheiros da industria nacional com foco e aplicação nas linhas de IGBT e transistores bipolares de potencia. As palestras foram ministradas por engenheiros Alemães localizados na planta de Warstein.
Infineon High Power – Seminário Técnico
Quem são os palestrantes?
Adam Kwiatkowski
Technical Marketing Manager - Medium Power Bipolars
David Levett
Power Electronics Design and Application Engineer at Infineon Technologies
Michael Stelte
Technical Marketing Manager – Bipolars, Medium Power Disc Devices and Solder Modules
Localização:
São Paulo Center - Av. Lineu de Paula Machado, 1088 / 1100 – Cdi ade Jardim – SP
(em frente às tribunas especiais do Jockey Club)

Opening
Aula 1: What’s new on Infineon IGBT modules?
Aula 2: What’s new on Infineon Diodes and Thyristors?
Intervalo
Aula 3: Paralleling power devices. Design rules to get power devices to share
Aula 4: Measuring and Benchmarking Diodes and Thyristors
Almoço
Aula 5: Gate driver design. Isolation, power supplies, protection and pcb layout
Aula 6: Three level converters. What are the options and advantages/disadvantages?
Intervalo
Aula 7: How to drive and protect thyristors?
Aula 8: How to design for thermal performance on diodes/thyristors stacks?

Término do evento

segunda-feira, 24 de abril de 2017

A STUDY ON NOVEL PULSE POWER SUPPLY FOR MAGNETRON -KAN HEE PARK - MASTER PROGRAM IN ELECTRICAL ENGINEERING KONKUK UNIVERSITY






A STUDY ON NOVEL PULSE POWER SUPPLY FOR MAGNETRON USING HVC EMBEDDED HIGH FREQUENCY TRANSFORMER BY KANG HE PARK MASTER PROGRAM IN ELECTRICAL ENGINEERING GRADUATE SCHOOL OF KONKUK UNIVERSITY 

 ABSTRACT 

 A conventional power supply for driving magnetron has a ferro-resonant transformer ,a high voltage capacitor (HVC) and a high voltage diode.And it provides magnetron with 4000 volts DC ,which is produced by step-up transformer and doubler action of the diode and capacitor.

Though this power supply is simple,transformer is bulky,heavy and has low-fficiency.To improve hese defects a high frquency inverter type power supply has been investigated and developed in recent years.

However .because of additional control circuit and switching devices,inverter type power supply is more expensive than conventional one.Therefore.it is necessary to reduce production cost by all means.


This paper describes a novel HVC embedded high frequency transformer ,which embedding high voltage capacitor in its secondary winding.
LINK
http://www.mediafire.com/file/czruhtxse6a1r0m/STUDY_NOVEL_PULSE_POWER_SUPPLY_FOR_MAGNETRON.pdf

sexta-feira, 14 de abril de 2017

Design, Development and Control of >13 kV Silicon-Carbide MOSFET based Solid State Transformer (SST) by Gangyao Wang- North Carolina State University









Design, Development and Control of >13 kV Silicon-Carbide MOSFET based Solid State Transformer (SST) by Gangyao Wang 
A dissertation submitted to the Graduate Faculty of North Carolina State University in partial fulfillment of the requirements for the Degree of Doctor of Philosophy 
Electrical Engineering Raleigh, North Carolina

WANG, GANGYAO. Design, Development and Control of >13 kV Silicon-Carbide MOSFET based Solid State Transformer (SST).

 ABSTRACT
Within the advent of the smart grid system, the solid state transformer (SST) will replace the traditional 60 Hz transformer formed by silicon steel core and copper windings and provides the interface between the high distribution voltage and low utility voltage. Other than the smaller size and less weight, SST also brings many more functionalities including voltage regulation, reactive power compensation, power management and renewable energy integration. The motivation of this research is to design a solid state transformer based on the wide band-gap Silicon Carbide (SiC) power MOSFETs and compare it with the silicon IGBT based SST. With wider band-gap and higher critical electrical field, the high voltage SiC power device has advantages over silicon power device for both conduction and switching. An extensive study and characterization of the SiC MOSFET was first carried out. It has been found that the MOSFET parasitic capacitors store significant amount of energy and the MOSFET turn on loss is high but turn off loss is virtually zero with small enough turn on gate resistor. A method for estimating the MOSFET parasitic capacitances has been proposed and explained in detail. A PLECS loss simulation model has been developed for the >13 kV SiC MOSFET which has been verified through a boost converter with the SiC MOSFET switches under 40 kHz for both soft switching and hard switching conditions separately. Widely used full bridge circuit has been chosen as the topology for the SST rectifier for its simple structure and bidirectional power transfer capability. Form three different SPWM modulation methods, the bipolar single frequency SPWM method has been identified as the most suitable control algorithm for the >13 kV SiC MOSFET base rectifier. With such modulation method, the generated PWM voltage frequency equals to the switching frequency, the each MOSFET equivalent switching frequency under hard switching conditions is only 1/4 of the PWM voltage frequency. The SST rectifier efficiency has been simulated and measured for 6 kHz and 12 kHz switching frequency with 6 kV dc bus voltage and 3.6 kV ac voltage, which is 99.2% for 6 kHz with 8.8 kW load and 98.5% for 12 kHz with 8.3 kW load.

The SST DC-DC stage utilize the dual active half bridge (DHB) as the topology, its zero voltage switching (ZVS) turn on range has been analyzed and it is concluded that the dead-time and device parasitic capacitances will reduce the ZVS range while the magnetizing current will increase the ZVS range. Since the SiC MOSFET has very high turn on loss, it is desired to have ZVS for the full load range. The high frequency transformer with integrated leakage inductance for the DHB operation has been designed, the magnetizing inductance has been decreased for increasing the ZVS range. The DC-DC stage efficiency has been measured as 96.9% for 10 kHz switching frequency and 10 kW load, and the peak efficiency is 97.5% for 10 kHz switching frequency and 5 kW load.

LINK VIEW FULL TEXT
https://repository.lib.ncsu.edu/handle/1840.16/9163

URL DIRECT :
https://repository.lib.ncsu.edu/bitstream/handle/1840.16/9163/etd.pdf?sequence=2&isAllowed=y

ALTERNATIVE LINK
http://www.mediafire.com/file/1eno463fcg4kj26/Design%2C_Development_and_Control_of_13_kV_SiliconC.pdf

AC-AC VOLTAGE REGULATION BY SWITCH MODE PWM CÛK VOLTAGE CONTROLLER WITH IMPROVED PERFORMANCE by Palash Kumar Banerjee - Ryerson University- Master of Engineering


AC-AC VOLTAGE REGULATION BY SWITCH MODE PWM CÛK VOLTAGE CONTROLLER WITH IMPROVED PERFORMANCE by Palash Kumar Banerjee 
 A project presented to Ryerson University in partial fulfillment of the requirement for the degree of Master of Engineering in the program of Electrical and Computer Engineering Toronto, Ontario, Canada, 2014

 ABSTRACT
Title: AC-AC Voltage Regulation by Switch Mode PWM Cûk Voltage Controller With Improved Performance
Degree: Master of Engineering
Year: 2014
Student Name: Palash Kumar Banerjee
Program: Electrical and Computer Engineering University: Ryerson University, Canada

In this research project, an AC Cûk voltage regulator has been proposed for maintaining constant voltage across the load during wide range of input voltage fluctuations. The proposed AC Cûk voltage regulator made of practical IGBT switches has been investigated for both manual and automatic control circuit. A fraction of the output voltage is taken as the input voltage of the control circuit and produce the error signal if any changes occur in the output voltage. The modified error signal is used to make PWM signals for switching devices as per output voltage of regulator. The PWM controls the ON/OFF time (Duty cycle) of switching devices (IGBTs) of the proposed regulator. As a result the regulator is maintaining a constant voltage across the load during any change in supply voltage. The simulation waveforms and the calculated total harmonics distortion (THD) values are compared with previously studied AC Buck-Boost regulator. The observed simulated waveforms of output voltage, output current and input current and THD values have been improved in case of proposed AC Cûk voltage regulator.

LINK VIEW FULL TEXT
http://digital.library.ryerson.ca/islandora/object/RULA:2617

EXAMEN PARCIAL DE ANALISIS DE CIRCUITOS ELECTRICOS I - UNIVERSIDAD NACIONAL DE INGENIERIA -PERÚ



UMA COLABORAÇÃO DO ENGENHEIRO PERUANO Ivan Eduardo Castillo Castilla‎

quarta-feira, 12 de abril de 2017

INFINEON HIGH POWER SEMINARIO TECNICO -TCT-ARTIMAR-27 ABRIL 2017 SÃO PAULO BRASIL



A TCT Brasil em parceria com a Artimar, está promovendo o primeiro seminário técnico da Infineon no Brasil sobre semicondutores de potencia. A líder mundial e seus especialistas prepararam uma agenda completa com os principais temas da atualidade, sobre módulos IGBTs e bipolares. Para credenciamento favor enviar e-mail - contato@tctbrasil.com.br


segunda-feira, 10 de abril de 2017

Output Voltage Quality Evaluation of Stand-alone Four-Leg Inverters Using Linear and Non-Linear Controllers- Instituto Superior de Engenharia de Lisboa




Output Voltage Quality Evaluation of Stand-alone Four-Leg Inverters Using Linear and Non-Linear Controllers Ricardo Luís , José Fernando Silva and José Carlos Quadrado
 Instituto Superior de Engenharia de Lisboa, Polytechnic Institute of Lisbon, 

 Abstract: 
This paper presents the design and experimental voltage quality evaluation of controllers for the output voltages of 3-phase four-leg voltage source inverters. These inverters are needed in stand-alone power systems to supply linear and non-linear, balanced or unbalanced loads with constant RMS value voltages at fixed frequency. Comparisons include closed loop outer voltage controllers based on predictive, sliding mode and decoupled proportional-integral controllers in dqo synchronous space, fitted with an inner hysteretic current loop vector controller in abg space. The 3-phase four-leg VSI output voltages waveform quality is analysed under unbalanced and non-linear loads. Received: 7 February 2017; Accepted: 29 March 2017; Published: 9 April 2017

Download PDF [5971 KB, uploaded 9 April 2017]
http://www.mdpi.com/1996-1073/10/4/504/pdf

segunda-feira, 3 de abril de 2017

A High-Efficiency Isolated-Type Three-Port Bidirectional DC/DC Converter for Photovoltaic Systems Yu-En Wu and Pin-Nan Chiu Department of Electronic Engineering, National Kaohsiung First University of Science and Technology,Taiwan



A High-Efficiency Isolated-Type Three-Port Bidirectional DC/DC Converter for Photovoltaic Systems Yu-En Wu * and Pin-Nan Chiu Department of Electronic Engineering, National Kaohsiung First University of Science and Technology, Kaohsiung 824, Taiwan
 Abstract
This paper proposes a novel high-efficiency isolated three-port bidirectional DC/DC device for photovoltaic (PV) systems. The device contains a high step-up converter for PV modules to supply power to the DC bus, and a bidirectional charge/discharge control circuit for the battery with an improved boost-flyback converter. When the PV modules supply sufficient energy, their output can be stepped up and energy supply to the DC bus and charging of the battery can be achieved simultaneously. However, when the energy supplied is insufficient, the battery provides energy to the DC bus. When the proposed converter is operated in the step-down mode, the DC-blocking capacitor on the high-voltage side is used to reduce the voltage on the transformer and achieve high step-down performance. Moreover, to improve the overall efficiency of the system, the energy stored in the leakage inductance is recycled and supplied to the DC-blocking capacitor during operation in the step-up mode. Finally, to verify the feasibility and practicability of the proposed devices, a 500 W three-port bidirectional DC/DC devices was implemented. The highest efficiencies achieved for operation in different modes were as follows: high step-up mode for the PV modules, 95.2%; battery step-up mode, 94.2%; and step-down mode, 97.6%. View Full-Text Keywords: isolated type; three-port bidirectional converter; photovoltaic systems.
LINK ORIGINAL
http://www.mdpi.com/1996-1073/10/4/434