No Blog Eletrônica de Potência você encontrará informações sobre teses,artigos,seminarios,congressos,tecnologias,cursos,sobre eletrônica potência. “TEMOS O DESTINO QUE MERECEMOS. O NOSSO DESTINO ESTA DE ACORDO COM OS NOSSOS MERITOS” ALBERT EINSTEIN. Imagination is more important than knowledge, for knowledge is limited while imagination embraces the entire world. EL FUTURO SE CONSTRUYE HOY,EL SUCESSO NO ES FRUTO DE LA CASUALIDAD,SE HUMILDE ,APRENDE SIEMPRE CADA DIA.
AUTOR DO BLOG ENG.ARMANDO CAVERO MIRANDA SÃO PAULO BRASIL
"OBRIGADO DEUS PELA VIDA,PELA MINHA FAMILIA,PELO TRABALHO,PELO PÃO DE CADA DIA,PROTEGENOS DO MAL"
sábado, 12 de julho de 2014
SEMIKRON Innovation Award and SEMIKRON Young Engineer Award 2014
(from left to right) Prof. Leo Lorenz (ECPE), Benjamin Zeller, Dr. Johann Miniböck, Bettina Heidenreich-Martin (SEMIKRON Foundation) Bild-Quelle: Mesago PCIM GmbH/Thomas Geiger
Winner of the Semikron Innovation Award 2014 The SEMIKRON Foundation and the ECPE European Center for Power Electronics e.V. jointly honoured Prof. Dr. Johann Walter Kolar, Power Electronic Systems Laboratory, ETH Zurich, Switzerland and Dr. Johann Miniböck, M-PEC Power Electronics Consulting, Austria with the SEMIKRON Innovation Award 2014 at the PCIM 2014 for their outstanding innovation on ´Multiple-Interleaved Triangular-Current-Mode Converters´. Winner of the Semikron Young Engineer Award 2014 The SEMIKRON Young Engineer Award goes to Benjamin Zeller, Fujitsu Technology Solutions in Augsburg, Germany for his contributions to the development of a high-efficient and high volume 65W power supply on a PC mainboard.
LINK
http://www.ecpe.org/awards/semikron-innovation-awardsemikron-young-engineer-award/
ECPE Young Engineer Award at PCIM Europe 2014
The winner of the Young Engineers Award 2014 sponsored by ECPE is Vinoth Kumar Sundaramoorthy. Dr. Sundaramoorthy is working as a Scientist at Corporate Research Center of ABB Switzerland Ltd, Switzerland since August 2008. The title of his Paper is 'Simultaneous Online Estimation of Junction Temperature and Current of IGBTs Using Emitter-Auxiliary Emitter Parasitic Inductance'.
LINK
http://www.ecpe.org/awards/ecpe-young-engineer-awardat-pcim-europe/
New Power Semiconductor Devices of JCS “Proton-Electrotex” Production
New Power Semiconductor Devices of JCS “Proton-Electrotex” Production
Yury Loktaev
Alexander Stavtsev/ "Proton-Electrotex", Technical Director
Alexey Surma/"Proton-Electrotex",Head of Research and Development Center
Anatoly Chernikov/"Proton-Electrotex", Deputy Technical Director for New Technology
JSC "Proton-Electritex" is one of the leading Russian companies in terms of development and production of high-power semiconductor devices: diodes, thyristors, modules on their base, heat-sinks.
The released production covers practically all range of power semiconductor thyristors and diodes with voltage from 100 to 6500 V and with current from 100 to 3000 A. Thyristors and diodes are produced of disk and stud constructional type. Along with thyristors and diodes which are supposed to operate under industrial frequency our company also produces fast and pulse-frequency thyristors, fast-recovery diodes as well as diodes with soft characteristic of reverse recovery.
A wide nomenclature of modules is also prodused on the base of thyristor and diode elements in different circuit configurations in full press-pack construction with isolated basement. Modules are produced under voltage from 100 to 1250 A.
The main tendencies of new equipment development can be characterized as following.
LINK1
http://proton-electrotex.com/files/project_52/08_New_Power_Semiconductor_Devices_eng.pdf
Yury Loktaev
Alexander Stavtsev/ "Proton-Electrotex", Technical Director
Alexey Surma/"Proton-Electrotex",Head of Research and Development Center
Anatoly Chernikov/"Proton-Electrotex", Deputy Technical Director for New Technology
JSC "Proton-Electritex" is one of the leading Russian companies in terms of development and production of high-power semiconductor devices: diodes, thyristors, modules on their base, heat-sinks.
The released production covers practically all range of power semiconductor thyristors and diodes with voltage from 100 to 6500 V and with current from 100 to 3000 A. Thyristors and diodes are produced of disk and stud constructional type. Along with thyristors and diodes which are supposed to operate under industrial frequency our company also produces fast and pulse-frequency thyristors, fast-recovery diodes as well as diodes with soft characteristic of reverse recovery.
A wide nomenclature of modules is also prodused on the base of thyristor and diode elements in different circuit configurations in full press-pack construction with isolated basement. Modules are produced under voltage from 100 to 1250 A.
The main tendencies of new equipment development can be characterized as following.
LINK1
http://proton-electrotex.com/files/project_52/08_New_Power_Semiconductor_Devices_eng.pdf
domingo, 6 de julho de 2014
terça-feira, 1 de julho de 2014
Design and development of a battery cell voltage monitoring system. Master’s Thesis Nick Prinsloo Department of Electrical Engineering Cape Peninsula University of Technology
Design and development of a battery cell voltage monitoring system.
Master’s Thesis
Nick Prinsloo
Department of Electrical Engineering
Cape Peninsula University of Technology
A Thesis for
The Department of Electrical Engineering in fulfilment of the requirements for the
Magister Technologiae degree in electrical engineering,
at the Cape Peninsula University of Technology.
Abstract
The purpose of this thesis was to design and develop a measurement system that would allow accurate measurement of individual cell voltages in a series cell stack. The system was initially proposed to be used in conjunction with an active cell balancer. This would allow for the efficient equalising of cells as well as provide detailed information on the cell stack and how the stack operates over time. Having a system that measures voltages accurately, with which the active cell balancer can be controlled would allow for peak cell lifetime and performance. Current battery management systems are large, complex and inefficient and a new way of battery management had to be investigated. To accurately measure individual cells in a series stack, the high common mode voltage must be negated. Different techniques that are currently used to create galvanic isolation were reviewed; circuits were designed and were simulated to find the most suitable design. The traditional methods used to create galvanic isolation did not provide adequate results. The methods were too inefficient and not accurate enough to be used. The methods that had the required accuracy were too complicated to connect in a useable system.
FULL THESIS
https://www.mediafire.com/?3ot760o3mv8mm9z
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