quarta-feira, 25 de julho de 2012
terça-feira, 24 de julho de 2012
Static Voltage Stabilizer IGBT PWM
IGBT based PWM type static voltage stabilizer designed and developed by Medi. This is an AC to AC voltage stabilizer. Medi is transferring the technical know-how of this product for manufacturers.
Physics 210 Lecture 35 - Self-induction Magnetcs
UMKC Physics Department's Professor Jerzy Wrobel talks about the process and derives expression for the inductance of an inductor. In conclusion, he demonstrates applications of induction by presenting models of a generator and transformer.
domingo, 22 de julho de 2012
sábado, 21 de julho de 2012
sexta-feira, 20 de julho de 2012
Power electronics aspects for AC grid connected systems - a revision. Aspectos de eletrônica de potência em sistemas ligados à rede de corrente alternada - uma revisão.
Tese de Livre Docencia
Documento
Autor
Nome completo
Wilson Komatsu
E-mail
Unidade da USP
Área do Conhecimento
Data de Defesa
Imprenta
São Paulo,2011
Banca examinadora
Galvão, Luiz Cláudio Ribeiro (Presidente)
Kaiser, Walter
Kassick, Ênio Valmor
Pomilio, José Antenor
Suemitsu, Walter Issamu
Kaiser, Walter
Kassick, Ênio Valmor
Pomilio, José Antenor
Suemitsu, Walter Issamu
Título em português
Aspectos de eletrônica de potência em sistemas ligados à rede de corrente alternada - uma revisão.
Palavras-chave em português
Eletrônica de potência
Resumo em português
Vários equipamentos de eletrônica de
potência são conectados à rede de corrente alternada (CA), para os mais
diversos fins, como conversão de energia, filtragem de corrente e
tensão, correção de reativos da rede CA etc. Este trabalho apresenta
uma revisão não abrangente, refletindo a experiência do autor, sobre
tais equipamentos. São discutidos aspectos de aplicações, modelamento de
equipamentos e componentes, controle de conversores, implementação e
testes. A abordagem é realizada com o uso de publicações do autor com
seus associados, de modo que não se apresenta aqui proposta inédita, mas
sim uma integração de conhecimento adquirido.
Arquivos
AVISO - A consulta a este documento fica condicionada na aceitação das seguintes condições de uso:
Este trabalho é somente para uso privado de atividades de pesquisa e ensino. Não é autorizada sua reprodução para quaisquer fins lucrativos. Esta reserva de direitos abrange a todos os dados do documento bem como seu conteúdo. Na utilização ou citação de partes do documento é obrigatório mencionar nome da pessoa autora do trabalho.
Este trabalho é somente para uso privado de atividades de pesquisa e ensino. Não é autorizada sua reprodução para quaisquer fins lucrativos. Esta reserva de direitos abrange a todos os dados do documento bem como seu conteúdo. Na utilização ou citação de partes do documento é obrigatório mencionar nome da pessoa autora do trabalho.
TeseLivreDocenciaWilsonKomatsu.pdf (5.04 Mbytes)
Data de Publicação
2012-05-21
A comparative study of control strategies in inverters for uninterruptible power supplies.Estudo comparativo de estratégias de controle para inversores de fontes ininterruptas de energia. USP SAO PAULO
AUTOR : ÁLVARO JORGE RODRIGUES
ESTUDO COMPARATIVO DE ESTRATÉGIAS DE CONTROLE PARA
INVERSORES DE FONTES ININTERRUPTAS DE ENERGIA
Dissertação apresentada à Escola
Politécnica da Universidade de São Paulo para obtenção do título
de Mestre em Engenharia.
Área de concentração: Sistemas de Potência
Orientador:
Prof. Dr. WILSON KOMATSU
Banca examinadora
Komatsu, Wilson (Presidente)
Kaiser, Walter
Marafão, Fernando Pinhabel
LINK
Dissertacao_Alvaro_Jorge_Rodrigues.pdf (1.79 Mbytes)
EP China 2012 / Electrical China 2012 (English)
The 14th International Exhibition on Electric Power Equipment and Technology (EP China 2012)/
The 7th International Exhibition on Electrical Equipment (Electrical China 2012)
Seminar 1 IGBT Gate Drive Technologies
Seminar
Seminar 1 IGBT Gate Drive Technologies
Schedule
Tuesday, 11.09.2012, 09:00 - 12:30 hrs
Speaker
Reinhard Herzer, Semikron Eletronik GmbH & Co.KG, Germany
 | Reinhard Herzer studied Electrical Engineering and received 1984 his PhD in the field of Microelectronics and 1992 his Habilitation in the field of Power Devices and Smart Power ICs from the Ilmenau Technical University. He joined Semikron Electronics Nuremberg, Germany in 1995 as head of the MOSFET, IGBT and IC research department. Here he is responsible for the introduction of new power device generations as well as driver- and sensor- IC in new power modules and systems. Further he is Associated Professor at the Technical University of Ilmenau were he teaches and coaches students and PhD students. | |
Language
English
Description
Fundamentals- Power control system
- Inverter principle, frequency inverter
- Methods of potential separation
IGBT devices
- Physical basics, parameter and characteristics
- Switching behaviour, switching times and losses
Driver fundamentals
- Gate driver topologies
- Transmission principles of control signal and driving energy
- Galvanic isolation and level shift
- Variants of power supply: DC/DC converter, bootstrap power supply
- Gate driving technologies and different gate drive circuits
Protection techniques- Under voltage protection
- Short pulse suppression and interlock
- Different kinds of short circuit protection
- Hard and soft turn-off
Calculation and selection of drivers
- Information and parameters, e.g. gate charge, frequency output voltage and current
Using IGBT drivers
- Input and output signals, VCE-diode
- Dimensioning and design of gate resistors
- Gate Clamping
- Some questions of system design
Overview about available gate drivers- Hybrid driver
- Integrated driver IC
- Inverter principle, frequency inverter
- Methods of potential separation
IGBT devices
- Physical basics, parameter and characteristics
- Switching behaviour, switching times and losses
Driver fundamentals
- Gate driver topologies
- Transmission principles of control signal and driving energy
- Galvanic isolation and level shift
- Variants of power supply: DC/DC converter, bootstrap power supply
- Gate driving technologies and different gate drive circuits
Protection techniques- Under voltage protection
- Short pulse suppression and interlock
- Different kinds of short circuit protection
- Hard and soft turn-off
Calculation and selection of drivers
- Information and parameters, e.g. gate charge, frequency output voltage and current
Using IGBT drivers
- Input and output signals, VCE-diode
- Dimensioning and design of gate resistors
- Gate Clamping
- Some questions of system design
Overview about available gate drivers- Hybrid driver
- Integrated driver IC
PCIM SOUTH AMERICA SAO PAULO 11/09/2012 Seminar 2 Power Seminconductor Devices - Technology Trends and Application Challenges
Seminar
Seminar 2 Power Seminconductor Devices - Technology Trends and Application Challenges
Schedule
Tuesday, 11.09.2012, 09:00 - 12:30 hrs
Speaker
Leo Lorenz, ECPE, D
 | Prof.Dr.Leo Lorenz received the Dipl. Ing. Degree from TU-Berlin and the Dr.-Ing. Degree from the University of Munich, Germany in 1976 and 1984 respectively. From 1976 till 1980 he was with AEG, R&D-center for Power Electronics- in Berlin. In 1984 he joined Siemens Semiconductor Division which became Infineon Technologies AG in 1999. Since this time he has been working on Power Semiconductor & Power IC’s in different functions and responsibilities. As a senior principal he was responsible for system engineering of industrial technologies and for the time being located in Munich. He published over 300 technical papers and has many patents in these fields. In 2001 he was nominated to become Professor for System Integration at the University of Ilmenau (Germany). He is the president of the ECPE (European Center of Power Electronics), an IEEE Fellow, a member of German Academy of Science and received several best paper and innovation awards. | |
Language
English
Description
Course Target:This
course is targeting R&D engineers from Industry and Academia
involved in development, design and optimization of power electronic
converters.
The Megatrends of our society such as Energy Efficiency, E-Mobility, Renewable Energies and SMART Grid are asking for Smart Power Electronic Solutions. Power Electronics is the technology associated with the efficient power conversion, precise control and conditioning of electric energy from the source up to the load.
Power Semiconductor devices are an enabling technology to meet these requirements. The major electrical and thermal improvement of the new generation of power devices is coming from the overall silicon chip utilization. Based on this idea the device technology development follows a chip horizontal optimization e.g. high cell densities, new trench gate structures and a vertical optimization to minimize drift layer and reduce the On-State losses significantly. This power device mainstream technology development is applied to all device types such as the IGBT, Fast Recovery Diode, Super Junction Transistor and low Voltage MOSFET.
The reliability and ruggedness of these new power semiconductors is driven by an advanced chip interfacing and packaging technology. For ultra high efficiency and ultra high power density fast switching devices have been developed. However it has to be considered that the application engineer is faced with new challenges of how to manage all the parasitics, thermal management and circuit set up.
Course Contents:* Introduction of Focus Application
* Basics about power semiconductor devices
* Fast switching Diodes (Freewheeling Diodes) and device limits
- Dynamic Performance & Limits
* IGBT development and challenges in Application
- Static and dynamic performance
- Overload characteristics, short circuit capability and destruction modes
- Avalanche characteristics
- di/dt, dv/dt-limits and physical effect
- Driving and protection circuit for low- and high-power devices
(Galvanic Isolation, short circuit and Over Voltage Protection)
- Impact of fast switching to circuit and device parasitics
- Thermal management,
* Device Reliability and Failure Mechanism
An event sponsored by PCIM
The Megatrends of our society such as Energy Efficiency, E-Mobility, Renewable Energies and SMART Grid are asking for Smart Power Electronic Solutions. Power Electronics is the technology associated with the efficient power conversion, precise control and conditioning of electric energy from the source up to the load.
Power Semiconductor devices are an enabling technology to meet these requirements. The major electrical and thermal improvement of the new generation of power devices is coming from the overall silicon chip utilization. Based on this idea the device technology development follows a chip horizontal optimization e.g. high cell densities, new trench gate structures and a vertical optimization to minimize drift layer and reduce the On-State losses significantly. This power device mainstream technology development is applied to all device types such as the IGBT, Fast Recovery Diode, Super Junction Transistor and low Voltage MOSFET.
The reliability and ruggedness of these new power semiconductors is driven by an advanced chip interfacing and packaging technology. For ultra high efficiency and ultra high power density fast switching devices have been developed. However it has to be considered that the application engineer is faced with new challenges of how to manage all the parasitics, thermal management and circuit set up.
Course Contents:* Introduction of Focus Application
* Basics about power semiconductor devices
* Fast switching Diodes (Freewheeling Diodes) and device limits
- Dynamic Performance & Limits
* IGBT development and challenges in Application
- Static and dynamic performance
- Overload characteristics, short circuit capability and destruction modes
- Avalanche characteristics
- di/dt, dv/dt-limits and physical effect
- Driving and protection circuit for low- and high-power devices
(Galvanic Isolation, short circuit and Over Voltage Protection)
- Impact of fast switching to circuit and device parasitics
- Thermal management,
* Device Reliability and Failure Mechanism
11. - 13.09.2012
São Paulo
Power Electronics South America 2012São Paulo
An event sponsored by PCIM
Assinar:
Postagens (Atom)
JOSIL ARTISTA PLASTICO FORTALEZA CEARA BRASIL AV.HERACLITO GRAÇA 41 TEL(85)32542378
