Seminar
Seminar 2 Power Seminconductor Devices - Technology Trends and Application Challenges
Schedule
Tuesday, 11.09.2012, 09:00 - 12:30 hrs
Speaker
Leo Lorenz, ECPE, D
 | Prof.Dr.Leo Lorenz received the Dipl. Ing. Degree from TU-Berlin and the Dr.-Ing. Degree from the University of Munich, Germany in 1976 and 1984 respectively. From 1976 till 1980 he was with AEG, R&D-center for Power Electronics- in Berlin. In 1984 he joined Siemens Semiconductor Division which became Infineon Technologies AG in 1999. Since this time he has been working on Power Semiconductor & Power IC’s in different functions and responsibilities. As a senior principal he was responsible for system engineering of industrial technologies and for the time being located in Munich. He published over 300 technical papers and has many patents in these fields. In 2001 he was nominated to become Professor for System Integration at the University of Ilmenau (Germany). He is the president of the ECPE (European Center of Power Electronics), an IEEE Fellow, a member of German Academy of Science and received several best paper and innovation awards. | |
Language
English
Description
Course Target:This
course is targeting R&D engineers from Industry and Academia
involved in development, design and optimization of power electronic
converters.
The Megatrends of our society such as Energy Efficiency, E-Mobility, Renewable Energies and SMART Grid are asking for Smart Power Electronic Solutions. Power Electronics is the technology associated with the efficient power conversion, precise control and conditioning of electric energy from the source up to the load.
Power Semiconductor devices are an enabling technology to meet these requirements. The major electrical and thermal improvement of the new generation of power devices is coming from the overall silicon chip utilization. Based on this idea the device technology development follows a chip horizontal optimization e.g. high cell densities, new trench gate structures and a vertical optimization to minimize drift layer and reduce the On-State losses significantly. This power device mainstream technology development is applied to all device types such as the IGBT, Fast Recovery Diode, Super Junction Transistor and low Voltage MOSFET.
The reliability and ruggedness of these new power semiconductors is driven by an advanced chip interfacing and packaging technology. For ultra high efficiency and ultra high power density fast switching devices have been developed. However it has to be considered that the application engineer is faced with new challenges of how to manage all the parasitics, thermal management and circuit set up.
Course Contents:* Introduction of Focus Application
* Basics about power semiconductor devices
* Fast switching Diodes (Freewheeling Diodes) and device limits
- Dynamic Performance & Limits
* IGBT development and challenges in Application
- Static and dynamic performance
- Overload characteristics, short circuit capability and destruction modes
- Avalanche characteristics
- di/dt, dv/dt-limits and physical effect
- Driving and protection circuit for low- and high-power devices
(Galvanic Isolation, short circuit and Over Voltage Protection)
- Impact of fast switching to circuit and device parasitics
- Thermal management,
* Device Reliability and Failure Mechanism
An event sponsored by PCIM
The Megatrends of our society such as Energy Efficiency, E-Mobility, Renewable Energies and SMART Grid are asking for Smart Power Electronic Solutions. Power Electronics is the technology associated with the efficient power conversion, precise control and conditioning of electric energy from the source up to the load.
Power Semiconductor devices are an enabling technology to meet these requirements. The major electrical and thermal improvement of the new generation of power devices is coming from the overall silicon chip utilization. Based on this idea the device technology development follows a chip horizontal optimization e.g. high cell densities, new trench gate structures and a vertical optimization to minimize drift layer and reduce the On-State losses significantly. This power device mainstream technology development is applied to all device types such as the IGBT, Fast Recovery Diode, Super Junction Transistor and low Voltage MOSFET.
The reliability and ruggedness of these new power semiconductors is driven by an advanced chip interfacing and packaging technology. For ultra high efficiency and ultra high power density fast switching devices have been developed. However it has to be considered that the application engineer is faced with new challenges of how to manage all the parasitics, thermal management and circuit set up.
Course Contents:* Introduction of Focus Application
* Basics about power semiconductor devices
* Fast switching Diodes (Freewheeling Diodes) and device limits
- Dynamic Performance & Limits
* IGBT development and challenges in Application
- Static and dynamic performance
- Overload characteristics, short circuit capability and destruction modes
- Avalanche characteristics
- di/dt, dv/dt-limits and physical effect
- Driving and protection circuit for low- and high-power devices
(Galvanic Isolation, short circuit and Over Voltage Protection)
- Impact of fast switching to circuit and device parasitics
- Thermal management,
* Device Reliability and Failure Mechanism
11. - 13.09.2012
São Paulo
Power Electronics South America 2012São Paulo
An event sponsored by PCIM
