A Study on the High Efficiency Inverter for Driving an
Induction Motor using GaN MOSFET
Park, Sang-yong
Dept. of Electronic Engineering
The Graduate School
Hanyang University
ABSTRACT
It was proved in this paper that the efficiency of the inverter using GaN
MOSFET ,which is regarded as a next generation power semiconductor,
was much improved comparing the efficiency to the counterpart using the
conventional Si MOSFET. Comparing the characteristics of GaN MOSFET
to those of Si MOSFET, GaN MOSFET shows very low on resistance and
very fast switching speed due to the high breakdown voltage and very
small parasitic capacitances. Therefore, using GaN MOSFET as switching
devices of the inverter, it is expected that the efficiency and characteristics
of the inverter can be improved since the switching and conduction losses
and switching noise can be reduced.
In this paper, to demonstrate the superiority of GaN MOSFET to Si
MOSFET, the inverter using GaN MOSFET for driving a 2.2 kW induction
motor was fabricated. The design specification of the inverter fabricated is
as follows: input voltage is 220 Vac, switching frequency is 20 kHz, and
the operating frequency is 0 to 70 Hz. The fabricated inverter was tested
and the normal operation of the inverter was confirmed. Finally the
efficiency of the inverter was measured and the results of measured
efficiency was compared to those of Si MOSFET inverter with the same
specification as the GaN MOSFET inverter fabricated. From the
comparison results, it is known that the efficiency of the GaN MOSFET
inverter is superior to that of Si MOSFET inverter at the full range of
load. The maximum efficiency of the GaN MOSFET inverter was
measured as 98.41 %.
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