A Study on the SiC MOSFET Gate Drive Method Ki-hyun Kim
Department of Electrical and Computer Engineering The Graduate School Pusan National University
Abstract
In this thesis, power MOSFET gate drive IC with novel soft-switching gate drive method and short-circuit protection method is designed and implemented. Designed IC is suitable for driving silicon carbide (SiC) power MOSFET. The proposed gate drive IC, which employs the high side and low side soft-switching controller, can reduce the overshoot and switching loss of the SiC power MOSFET during the turn-on period effectively. The short-circuit protection circuit which is adopted the proposed gate drive IC uses de-saturation detect circuit for detecting the short-circuit condition of the switching device and safely cuts off the short-circuit transient current by using the clamp circuit and the multi-sync drive circuit. The multi-sync drive circuit, which is composed of two n-MOSFET and one soft turn-off controller, adjust the sink current for switch cut-off by 3 steps. In this thesis, simulation and experiment were performed to verify the electrical characteristics of the gate drive IC for the SiC power MOSFETs with the two proposed techniques. The proposed short-circuit protection circuit detects the short-circuit condition within 800 ㎱ and safely cuts off the switching device from the short-circuit condition within 1.4 ㎲ after short-circuit condition detected. With the use of the proposed gate drive IC, switching loss of the SiC power MOSFET decreased by 14 % without sacrificing the overshoot characteristics.
LINK ORIGINAL: http://www.riss.kr/search/detail/DetailView.do?p_mat_type=be54d9b8bc7cdb09&control_no=d1e7f72eff713d63ffe0bdc3ef48d419
LINKALTERNATIVO: https://www.mediafire.com/file/7lvmf7wemwvy57a/silicon_carbide_driver.pdf/file
