Ruggedness of High-Voltage IGBTs and
Protection Solutions
by Thomas Basler
Approved to obtain the degree of Doctor of Engineer.
Technical University of Chemnitz
Bibliographic information from the German National Library
The German National Library lists this publication in the
German National
Bibliography; detailed bibliographical information is in the
Available on the Internet at http://dnb.d-nb.de.
This work was supported by the Faculty of Electrical Engineering and
Information technology from the Technical University of Chemnitz as a dissertation
Approved to obtain the degree of Doctor of Engineer.
The work was written in English.
Date of submission: September 10, 2013
Reviewer: Prof. Dr. Josef Lutz
Prof. Dr. Steffen Bernet
Dr. Roland Jakob
Defense Day: February 28, 2014
ABSTRACT
Application-Oriented IGBT Requirements and
Motivation of this Work This thesis was written at Chemnitz University of Technology in cooperation
with General Electric Energy Power Conversion GmbH, former Converteam,
in Berlin. Many of the tasks and problem-settings regarding the improvement
of ruggedness of high-voltage IGBTs were derived directly from the industry
partner and its 3-level medium-voltage converter application. This topology
is widely used for industrial and traction applications [Ber00]. For the considered
converter, 42-chip press-pack IGBTs with a voltage rating of 4.5 kV
are used. The challenge was to investigate all possible IGBT short-circuit
cases in this type of converter and to shift the complete converter protection
concept to the optimum level. The interconnection between the gate unit and
the IGBT and the surrounding circuit parameters like the stray and shortcircuit
inductance were of special interest. In addition to the short-circuit
topic, a solution should be found on how to protect the load of the converter
(e.g. a large windmill generator) against asymmetric short-circuit currents
and alternating torques, see Chapter 5. For this purpose, the surge-current
mode of the IGBT is introduced and verified. It will be shown that this special
mode can be handled by the IGBT without destruction or significant
ageing.
To meet the requirements and test conditions mentioned above, a singlechip
test bench was constructed. New phenomena like the self-turn-off mechanism
or special IGBT destructions under short-circuit and surge-current
mode were studied in detail. Countermeasures were found to protect the
IGBT and the complete power-electronic circuit and application from a possible
destruction.
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