Integration of SiC Devices and High-Frequency Transformer for High-Power Renewable Energy Applications Weichong Yao 1 , Junwei Lu 1,*, Foad Taghizadeh 2 , Feifei Bai 1 and Andrew Seagar 1 1 School of Engineering and Built Environment, Griffith University, Brisbane, QLD 4111, Australia 2 School of Engineering, Macquarie University, Sydney, NSW 2109, Australia * Correspondence: j.lu@griffith.edu.au
Abstract: This paper presents a novel structure of Integrated SiC MOSFETs with a high-frequency
transformer (I-SiC-HFT) for various high-power isolated DC–DC converters. Several resonant
converters are considered for integration in this paper, including the phase-shift full-bridge (PSFB)
converter, inductor–inductor–capacitor (LLC) resonant converter, bidirectional PSFB converter, and
capacitor–inductor–inductor–capacitor (CLLC) resonant converter. The applications of I-SiC-HFT
are focused on V2G EV battery charging systems, energy storage in DC and AC microgrids, and
renewable energy systems. SiC devices, including MOSFETs, Schottky diodes, and MOSFET modules,
are used in this novel structure of I-SiC-HFT. The high-frequency magnetic structure uses distributed
ferrite cores to form a large central space to accommodate SiC devices. The optimized architecture
of I-SiC-HFT and heatsink structure is proposed for thermal management of SiC devices. To prove
the concept, a small-scale 1.5 kW prototype I-SiC-HFT is used to demonstrate the basic structure
and various performance indicators through the FEM based electromagnetic simulation and DC–DC
converter experiments.
VIEW FULL PAPER: https://www.mdpi.com/1996-1073/16/3/1538





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