Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs Yu Wu, Yaojie Sun, and Yandan Lin

 

Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs Yu Wu, Yaojie Sun, and Yandan Lin JPE, vol.14, no.4, pp.788-795 , 2014 Yu Wu*, Yaojie Sun†, and Yandan Lin* *†Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai, China Abstract This paper demonstrates the dynamic behaviors of paralleled high power IGBTs using trench and fieldstop technologies. Four IGBTs are paralleled and standard deviation is adopted to represent the imbalance. Experiments are conducted under three different operation conditions and at different temperatures ranging from -25°C to 125°C. The experimental results show that operation at very low and very high temperatures usually aggravates the switching behaviors. There is a trade-off between the balance and the losses at low temperatures. These results can help in the design of heat sinks in paralleling applications confronting very low temperatures.
 LINK FULL PAPER
http://manuscript.jpe.or.kr/ltkPSWeb/pub/pubfpfile.aspx?ppseq=888

600/1200V IGBTs Set Benchmark Performance in High Switching Speed Applications

600/1200V IGBTs Set Benchmark Performance in High Switching Speed Applications

The third generation of high speed IGBTs from Infineon Technologies (H3) in the voltage class 600V and 1200V are optimised for high speed switching in welding, UPS, SMPS and Solar applications. The new devices show excellent dynamic behaviour, smooth switching and significant loss reduction, providing the system designers with a cost-effective solution to meet today’s stringent requirements of energy efficiency regulations and simplify the system design by reduction of cooling and filtering efforts. Davide Chiola and
Holger Hüsken, IGBT Application Engineering and IGBT Technology Development, Infineon
Technologies, Austria/Germany
FULL PAPER HERE:http://www.4shared.com/document/1Isct0m_/IGBTNOVO.html

A Novel Driving and Protection Circuit for REVERSE BLOCKING IGBT USING IN MATRIX CONVERTER

A Novel Driving and Protection Circuit for
Reverse-Blocking IGBT Used in Matrix Converter
Daning Zhou, Kai Sun, Student Member, IEEE, Zhichao Liu, Lipei Huang,
Kouki Matsuse, Fellow, IEEE, and Kiyoaki Sasagawa

V. CONCLUSION
This paper has discussed a novel drive and protection circuit
designed for RB-IGBT.
1) A novel drive circuit was proposed to solve the conflict
between restricting di/dt of collector current in
turn-on transitions, dv/dt of collector–emitter voltage in
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, VOL. 43, NO. 1, JANUARY/FEBRUARY 2007
Fig. 20. Performance of the matrix converter in 50-Hz output frequency and
4.5-Nm load condition. (a) Input phase voltage νa, phase current ia, and its fast
Fourier transform (FFT). (b) Output line voltage νAC, output current iA, and
its FFT.
turn-off transitions, and reducing turn-on/off intervals
that are existing in conventional drive circuits. Experimental
results show that the proposed circuit can work
as the hope.
2) A novel protection circuit was designed. The Ic sensing
unit of this circuit is specifically designed for an RBIGBT.
Experimental results show that the short-circuit
FUL condition can be handled properly. The problem is
that the value of the large resistance used to import Vce
of RB-IGBT is difficult to determine. It should be high
enough to reduce its power losses. However, it should be
controlled to reduce the response time in case a shortcircuit
fault occurs.
3) A three-phase-to-three-phase matrix converter was set up.
The proposed collector current sensing method is found
useful to produce the output current direction signals,
which are necessary to implement the current-sign-based
four-step commutation method.
The future work includes the following.
1) Simplify the proposed drive circuit to reduce the cost.
2) Investigate the effects of the variations of component
parameters on the performance of the proposed drive and
protection circuit.
ACKNOWLEDGMENT
The authors would like to thank Dr. H. Shigekane,
Dr. S. Igarashi of Fuji Electric Device Technology Company,
Ltd., and Y. Abe, and M. Takei of Fuji Electric Advanced
Technology Company, Ltd. for their kind support of this project.