Mosfet_or_IGBT_Driver IC 2101.avi

Mosfet_or_IGBT_Driver IC 2101.avi
Driving a mosfet or an IGBT in a half bridge configuration requires a driver as the top mosfet or IGBT has to get the DC supply from an isolated source.Understanding its use helps writting its input program and output use for inverters ,converters erc .

Energy Efficiency in India: Challenges and Initiatives

Energy Efficiency in India: Challenges and Initiatives
BerkeleyLab 20 de maio de 2010
May 13, 2010 EETD Distinguished Lecture: Ajay Mathur is Director General of the Bureau of Energy Efficiency, and a member of the Prime Minister's Council on Climate Change. As Director General of BEE, Dr. Mathur coordinates the national energy efficiency programme, including the standards and labeling programme for equipment and appliances; the energy conservation building code; the industrial energy efficiency programme, and the DSM programmes in the buildings, lighting, and municipal sectors.

How to Bring Solar Energy to Seven Billion People

How to Bring Solar Energy to Seven Billion People-COMO TRAER ENERGIA SOLAR PARA 7 BILLONES DE PERSONAS .

PALESTRA INTERESANTE DO BERKELEY LAB,EL ARTIGO COMPLETO LO ENCUENTRAS EN EL SITE:http://www.rdmag.com/Multimedia/Video/2010/05/energy-how-to-bring-solar-energy-to-seven-billion-people/

PCIM 2010 EUROPE ON VIDEO

PCIM Europe 2010 Video Archive Now Online
From May 4 through 6, Techcast was at the Power Conversion Intelligent Motion (PCIM) Europe 2010 trade show in Nuremberg to record 70 presentations. Online access to the video archive for this international exhibition and conference is now available immediately for a fee.
http://www.techcast.com/en/news/20/62/PCIM-Europe-2010-Video-Archive-Now-Online/

SiC Power Module

The High-temperature SiC Power Module was first marketed via a public press
release and floor demonstration at CEATEC 2008 (Combined Exhibition of
Advanced Technologies), Japan’s premiere electronics trade show. CEATEC took
place September 30–October 4, 2008, in Makuhari, Japan.

Product’s Primary Function
Power electronics modules are the core components of all power electronics
systems. In essence, power electronics systems convert electrical energy from
one form (provided by a source) into another form (consumed by a load). They are
required to drive electric motors (such as those for electric and hybrid vehicles),
convert energy from renewable sources (i.e., solar arrays or wind generators), and
provide power for a wide variety of electronics and electronic systems (DC power
supplies and inverters).
With applications in hybrid and electric vehicles, renewable energy interfaces,
and more-electric aircraft, it reduces size and volume of power electronic
systems by an order of magnitude over present state-of-the-art silicon-based
solutions while simultaneously reducing energy loss by greater than 50 percent and
offering the potential to save $100s of millions.
Our team’s high-temperature silicon carbide power module is the world’s first
commercial high-temperature (250°C) silicon carbide-based power electronics
module. The 50 kW (kilowatt) (1200 V (volt) /150 A (ampere) peak) silicon carbide
(SiC) power modules are rated up to 250°C junction temperature and integrate
high-temperature gate drivers.
Figure 9.1. Exploded view of the high-temperature SiC half-bridge power module.

FULL PAPER IS HERE:http://www.4shared.com/document/YYztmaT9/SIC_Power_Module.html