AUTOR DO BLOG ENG.ARMANDO CAVERO MIRANDA SÃO PAULO BRASIL

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“GRAÇAS A DEUS PELA VIDA,PELA MINHA FAMÍLIA,PELO TRABALHO.PELO PÃO DE CADA DIA,POR NOS PROTEGER DO MAL”

“SE SEUS PROJETOS FOREM PARA UM ANO,SEMEIE O GRÂO.SE FOREM PARA DEZ ANOS,PLANTE UMA ÁRVORE.SE FOREM PARA CEM ANOS,EDUQUE O POVO”

https://picasion.com/
https://picasion.com/

domingo, 20 de julho de 2014

CONTROLE DA POTÊNCIA GERADA EM MICRORREDES AUTÔNOMAS E ISOLADAS COM FONTES DE ENERGIA RENOVÁVEIS E SISTEMA DE ARMAZENAMENTO COM BANCOS DE BATERIAS

José Gomes de Matos, Luiz Antonio de Souza Ribeiro e Felipe Simões Freitas e Silva
Instituto de Energia Elétrica – Universidade Federal do Maranhão – IEE-UFMA-BRASIL
Avenida dos Portugueses, 1966, Bacanga, CEP 65.080-805 – São Luís - MA
E-mails: gomes@dee.ufma.br; luiz_ribeiro@dee.ufma.br; simoesfs@gmail.com

Resumo - Este trabalho apresenta uma nova estratégia para controlar a potência gerada por fontes de energia renováveis conectadas à microrredes autônomas e isoladas, que utilizam sistema de armazenamento a base de banco de baterias. O principal objetivo da estratégia de controle proposta é manter o balanço de energia dentro da microrrede para que a integridade dos bancos de baterias seja garantida, mesmo quando houver potencial para geração de mais energia do que a carga pode consumir e os bancos de baterias são capazes armazenar. Essa meta é alcançada controlando a quantidade de potência gerada dentro da microrrede, sem dissipar eventual excesso de energia gerada em cargas resistivas auxiliares e sem utilizar qualquer comunicação física entre os sistemas de controle dos conversores de potência envolvidos. A frequência elétrica da microrrede é utilizada para informar quanta potência cada fonte de energia pode gerar para que a tensão dos bancos de baterias seja mantida abaixo do seu valor máximo permitido. Um método de controle droop modificado é proposto para implementar esse tarefa.
 LINK
https://www.mediafire.com/?o38io6a4p4z6662

sábado, 12 de julho de 2014

SEMIKRON Innovation Award and SEMIKRON Young Engineer Award 2014


(from left to right) Prof. Leo Lorenz (ECPE), Benjamin Zeller, Dr. Johann Miniböck, Bettina Heidenreich-Martin (SEMIKRON Foundation) Bild-Quelle: Mesago PCIM GmbH/Thomas Geiger

Winner of the Semikron Innovation Award 2014 The SEMIKRON Foundation and the ECPE European Center for Power Electronics e.V. jointly honoured Prof. Dr. Johann Walter Kolar, Power Electronic Systems Laboratory, ETH Zurich, Switzerland and Dr. Johann Miniböck, M-PEC Power Electronics Consulting, Austria with the SEMIKRON Innovation Award 2014 at the PCIM 2014 for their outstanding innovation on ´Multiple-Interleaved Triangular-Current-Mode Converters´. Winner of the Semikron Young Engineer Award 2014 The SEMIKRON Young Engineer Award goes to Benjamin Zeller, Fujitsu Technology Solutions in Augsburg, Germany for his contributions to the development of a high-efficient and high volume 65W power supply on a PC mainboard.
LINK
http://www.ecpe.org/awards/semikron-innovation-awardsemikron-young-engineer-award/

ECPE Young Engineer Award at PCIM Europe 2014


The winner of the Young Engineers Award 2014 sponsored by ECPE is Vinoth Kumar Sundaramoorthy. Dr. Sundaramoorthy is working as a Scientist at Corporate Research Center of ABB Switzerland Ltd, Switzerland since August 2008. The title of his Paper is 'Simultaneous Online Estimation of Junction Temperature and Current of IGBTs Using Emitter-Auxiliary Emitter Parasitic Inductance'.
LINK
http://www.ecpe.org/awards/ecpe-young-engineer-awardat-pcim-europe/

New Power Semiconductor Devices of JCS “Proton-Electrotex” Production

New Power Semiconductor Devices of JCS “Proton-Electrotex” Production

Yury Loktaev
Alexander Stavtsev/ "Proton-Electrotex", Technical Director
Alexey Surma/"Proton-Electrotex",Head of Research and Development Center
Anatoly Chernikov/"Proton-Electrotex", Deputy Technical Director for New Technology

JSC "Proton-Electritex" is one of the leading Russian companies in terms of development and production of high-power semiconductor devices: diodes, thyristors, modules on their base, heat-sinks.
The released production covers practically all range of power semiconductor thyristors and diodes with voltage from 100 to 6500 V and with current from 100 to 3000 A. Thyristors and diodes are produced of disk and stud constructional type. Along with thyristors and diodes which are supposed to operate under industrial frequency our company also produces fast and pulse-frequency thyristors, fast-recovery diodes as well as diodes with soft characteristic of reverse recovery.
A wide nomenclature of modules is also prodused on the base of thyristor and diode elements in different circuit configurations in full press-pack construction with isolated basement. Modules are produced under voltage from 100 to 1250 A.
The main tendencies of new equipment development can be characterized as following.
LINK1
http://proton-electrotex.com/files/project_52/08_New_Power_Semiconductor_Devices_eng.pdf