Study on Management Standards of Total Harmonics Distortion(THD) measured from UPS Jeong,Unho Department of Electrical and Electronic Engineering Graduate School,Dongshin University

Study on Management Standards of Total
Harmonics Distortion(THD) measured from UPS
Jeong,Unho
Department of Electrical and Electronic Engineering
Graduate School,Dongshin University
(SupervisorbyProfessor:Ph.D.Kim,Dong-Min)

The purpose of this paper is to describe UPS(Uninterruptible Power
Supply) in a comprehensive measure THD(Total Harmonic Distortion)
and compared with domestic and international management standards
in harmonics, harmonics reduction measures by analyzing the
appropriate UPS technology. Harmonics generated by the UPS
measurements of national standards was confirmed appropriate, UPS
comprehensive harmonic currents measured range THD-I limits for
national standards, the reference by KSC 4310, THD-V for domestic
not based on the site was confirmed. Therefore,The IEEE(Institute of
Electrical and Electronics Engineers)Std.519 is applied in this paper as
a reference for domestic standards on THD-V limits management.In
recent years,according to integration of KSC standards into IEC,UPS
standards are being revised as KSC IEC 62040,butthere are still no
regulations for THD-V and THD-IaboutUPS causing confusions in
some aspects.
LINK
http://www.mediafire.com/view/1bahx2wgay96n9a/Study_on_Management_Standards_of_Total_Harmonics_Distortion(THD)_measured_from_UPS.pdf

Electronic measurement in nanotechnology and microelectronics Dyakonov V.

Title: Electronic measurement in nanotechnology and microelectronics
Author: Athos AA Dyakonov V.
Publisher: DMK Press
Year: 2011
Pages: 688
Format: PDF
Size: 47.0 MB
ISBN: 50,2
Quality: Excellent

Russia's first monograph on the most advanced electronic and electrical radio measurements and measuring instruments used in research, testing and test equipment and systems, microelectronics and nanotechnology. For the first time in detail the means of measurement applied in a large-scale microelectronic production and instruments leading to their developing and manufacturing firms: Keithley, Tektronix, Agilent Technologies, LeCroy, R & S and others. Particular attention is paid to the analysis and generation of test signals, measurement of their parameters in small and micro time measured by ultra low currents and voltages, impedance analysis and immittance circuits, measurement of static and dynamic characteristics of semiconductor devices and integrated circuits and others. It is the largest survey of contemporary foreign and domestic instruments in the market of Russia and the world. For engineers, scientists, graduate students, teachers and students of universities and technical universities and classical types.
LINK
http://www.mediafire.com/view/80tjucbcmp2mi90/Electronic_measurement_in_nanotechnology_and_microelectronics.pdf

Corto-circuito y selección de equipos eléctricos Kryuchkov IP, Starshinov VA, Gusev YP

Título: Corto-circuito y selección de equipos eléctricos
Autor: Starshinov .
Editorial: MEI
Año: 2012
Páginas: 568
Format: PDF

Corto-circuito y selección de equipos eléctricos - Métodos para el cálculo de cortocircuito, los modos asimétricos simples y complejas en los sistemas de potencia, efectos térmicos y electrodinámicos de las corrientes de cortocircuito en los conductores y dispositivos eléctricos, métodos y formas de limitar las corrientes de cortocircuito, especialmente los cálculos de cortocircuitos en la tensión eléctrica hasta 1 kV.
Instrucciones metódicas para el uso práctico de los dispositivos de protección, así como características de los cálculos de bus rígida de conmutación al aire libre. Un conjunto de programas para el cálculo de corto circuito en un ordenador.
Concebido como un libro de texto para las áreas de formación universitarios 140200 - "Energía Eléctrica" ​​y puede ser utilizado por los expertos, la industria de la energía eléctrica.
LINK
http://www.mediafire.com/view/dil4l6m12w0yno3/Korotkie2012.pdf

COMPENSAÇÃO DA FORMA DE ONDA DE UM INVERSOR PWM UTILIZANDO UMA TÉCNICA DE CONTROLE REPETITIVO Vinícius Cordeiro Durães Araújo Programa de Pós- Graduação em Engenharia Elétrica da Escola de Engenharia da Universidade Federal de Minas Gerais (ENGETRON) BRASIL

COMPENSAÇÃO DA FORMA DE ONDA DE UM INVERSOR PWM
UTILIZANDO UMA TÉCNICA DE CONTROLE REPETITIVO

Vinícius Cordeiro Durães Araújo
Dissertação de Mestrado submetida à Banca Examinadora
designada pelo Colegiado do Programa de Pós-
Graduação em Engenharia Elétrica da Escola de
Engenharia da Universidade Federal de Minas Gerais,
como requisito para obtenção do Título de Mestre em
Engenharia Elétrica.
Orientador: Prof. Porfírio Cabaleiro Cortizo
Belo Horizonte - MG-BRASIL
Universidade Federal de Minas Gerais
Escola de Engenharia
Programa de Pós-Graduação em Engenharia Elétrica

RESUMO
 Os inversores para sistemas UPS devem fornecer uma tensão de saída regulada e com baixo valor de distorção harmônica total (THD - Total harmonic distortion). Este trabalho apresenta um estudo de diversas técnicas de controle para o estágio de saída de um sistema UPS. Foi realizada uma pesquisa bibliográfica de estratégias de controle que contemplam este objetivo. A utilização de uma técnica de controle digital para regular o valor RMS da forma de onda associada com a ação integral repetitiva é avaliada para inversores PWM de baixo custo. Como resultado da ação integral repetitiva, esta estratégia de controle digital reduz o erro de regime permanente e as distorções causada por perturbações periódicas tais como cargas não lineares. Além disso, a técnica de controle digital analisada mede apenas a tensão de saída, reduzindo o custo com SENSORES. O controle repetitivo é uma boa alternativa para as UPS de baixo custo. Ele utiliza a natureza repetitiva das perturbações enquanto os outros métodos não o fazem. O mecanismo de controle é na verdade um controle integral baseado no período fundamental. A tensão de saída é a única variável que deve ser medida, e a ação do controlador principal não precisa ser muito rápida para se alcançar uma forma de onda da tensão de saída com baixa taxa de distorção harmônica total. Apesar de uma resposta sub-cíclica não ser possível, um tempo de assentamento de alguns ciclos do período fundamental é aceitável para muitas aplicações. A Engetron e a excelente equipe do projeto (Mario Henrique, Paulo de Tarso, Wilton Padrão e todos os outros) pelo pleno apoio durante todo o desenvolvimento deste trabalho e incontáveis contribuições
 LINK
http://www.ppgee.ufmg.br/defesas/199M.PDF

Design, Development and Control of >13kV Silicon-Carbide MOSFET based Solid State Transformer(SST) Authors:Wang, Gangyao North Carolina State University

Design, Development and Control of >13 kV Silicon-Carbide MOSFET based Solid
State Transformer (SST) by Gangyao Wang
A dissertation submitted to the Graduate Faculty of North Carolina State University
in partial fulfillment of the requirements for the Degree of Doctor of Philosophy
Electrical Engineering
Raleigh, North Carolina
2013 
ABSTRACT

WANG, GANGYAO. Design, Development and Control of >13 kV Silicon-Carbide MOSFET based Solid State Transformer (SST). (Under the direction of Dr. Alex Huang.)

Within the advent of the smart grid system, the solid state transformer (SST) will replace the traditional 60 Hz transformer formed by silicon steel core and copper windings and provides the interface between the high distribution voltage and low utility voltage. Other than the smaller size and less weight, SST also brings many more functionalities including voltage regulation, reactive power compensation, power management and renewable energy integration. The motivation of this research is to design a solid state transformer based on the wide band-gap Silicon Carbide (SiC) power MOSFETs and compare it with the silicon IGBT based SST. With wider band-gap and higher critical electrical field, the high voltage SiC power device has advantages over silicon power device for both conduction and switching. An extensive study and characterization of the SiC MOSFET was first carried out. It has been found that the MOSFET parasitic capacitors store significant amount of energy and the MOSFET turn on loss is high but turn off loss is virtually zero with small enough turn on gate resistor. A method for estimating the MOSFET parasitic capacitances has been proposed and explained in detail. A PLECS loss simulation model has been developed for the >13 kV SiC MOSFET which has been verified through a boost converter with the SiC MOSFET switches under 40 kHz for both soft switching and hard switching conditions separately.
WEBSITE ORIGINAL
http://repository.lib.ncsu.edu/ir/handle/1840.16/9163
LINK DIRECT
http://repository.lib.ncsu.edu/ir/bitstream/1840.16/9163/1/etd.pdf
LINK ALTERNATIVO
https://copy.com/daXOYRg2bHliBDCU