LINK GOOGLE BOOK
https://books.google.com.br/books?id=qW_zBQAAQBAJ&lpg=PR4&ots=xTkgydGG-J&dq=Elektronische%20Schaltungen%201%3A%20Grundlagen%2C%20Analyse%2C%20Aufbau%20(Springer-Lehrbuch)&hl=pt-BR&pg=PP1#v=onepage&q&f=false
"OBRIGADO DEUS PELA VIDA,PELA MINHA FAMILIA,PELO TRABALHO,PELO PÃO DE CADA DIA,PROTEGENOS DO MAL"
“SE SEUS PROJETOS FOREM PARA UM ANO,SEMEIE O GRÂO.SE FOREM PARA DEZ ANOS,PLANTE UMA ÁRVORE.SE FOREM PARA CEM ANOS,EDUQUE O POVO.”
“Sixty years ago I knew everything; now I know nothing; education is a progressive discovery of our own ignorance. Will Durant”
sexta-feira, 28 de agosto de 2015
quinta-feira, 27 de agosto de 2015
terça-feira, 25 de agosto de 2015
Energías Renovables, Generación Distribuida y Microredes Parte 1 - Jueves 20 de Agosto 2015 – 6:30 pm. Lugar: FIEE-UNI, Lima – Perú. Expositor: MSc. .Jorge Mírez Tarrillo
Enlace Parte 2 : https://youtu.be/St4dRPdZG_k
Video de Conferencia “Energías Renovables, Generación Distribuida y Microredes”. Jueves 20 de Agosto 2015 – 6:30 pm. Lugar: FIEE-UNI, Lima – Perú. Expositor: Jorge Mírez
Advanced GaN-based MISFET for RF/Power Application KI SIK IM - KYUNGPOOK NATIONAL UNIVERSITY
( Abstract ) the advanced GaN-based MISFETs for RF/power application were fabricated and characterized using advanced technologies. The applications of the GaN-based MISFET are the RF amplifier in chapter 3 and power switching in chapter 4 and 5, respectively. The key requirements of HEMT are high frequency, high RF power, and low leakage current. AlGaN/GaN HEMT with T-gate of 0.15 ?m exhibits excellent performances such as Id,max of 1 A/mm, maximum gm of 180 mS/mm, fT of 55 GHz, and fmax of 100 GHz with Pout = 4 W/mm. Appling the air-bridge process, AlGaN/GaN HEMT with 30-finger for applying K-band amplifier was successfully fabricated without reducing DC & RF performance. Normally-off operation, low on-resistance, and high breakdown voltage are very important for power switching application. A recessed-gate normally-off GaN MOSFET with an Al2O3 gate insulator was proposed by utilizing an extremely high 2-D electron-gas density (> 1014/cm2) at an AlGaN/GaN heterostructure as source and drain, which can be obtained by controlling the tensile stress accompanied with the growth of GaN on silicon substrate. The fabricated MOSFET with stress controlled source and drain exhibited excellent device performances, such as a threshold voltage of 2 V, drain current of 353 mA/mm, extrinsic gm of 98 mS/mm, and ?FE of 225 cm2/V?s. The dry etching condition of AlGaN layer for recessed-gate was optimized to obtaining the high Vth (> 2 V).
LINK
http://www.mediafire.com/view/8j4z7xxmxve7yzx/Advanced_GaN-based_MISFET_for_RFPower_Application.pdf
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