No Blog Eletrônica de Potência você encontrará informações sobre teses,artigos,seminarios,congressos,tecnologias,cursos,sobre eletrônica potência. “TEMOS O DESTINO QUE MERECEMOS. O NOSSO DESTINO ESTA DE ACORDO COM OS NOSSOS MERITOS” ALBERT EINSTEIN. Imagination is more important than knowledge, for knowledge is limited while imagination embraces the entire world. EL FUTURO SE CONSTRUYE HOY,EL SUCESSO NO ES FRUTO DE LA CASUALIDAD,SE HUMILDE ,APRENDE SIEMPRE CADA DIA.
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segunda-feira, 25 de dezembro de 2023
How did the USSR miss stealth technology? Part 1 P.Yu. Ufimtsev and the edge wave method-Como a URSS perdeu a tecnologia furtiva? Parte 1 P.Yu. Ufimtsev e o método da onda de borda
The discovery that actually enabled the development of the Lockheed F-117, the first truly stealthy aircraft, was achieved by the Russian physicist Pyotr Ufimtsev, who in 1962 published a paper on a new method (not the first) for estimating edge diffraction, which became known as the Physical Theory of Diffraction. Ufimtsev postulated that Maxwell's equations would make it possible to calculate the behavior of radar waves relayed from a reflective object. The radar return would depend in part on the shape of the object.
The era of 1950-1970 was marked by brilliant achievements in astronautics, nuclear energy and the aviation industry. It’s the last one I’d like to talk about.
Ufimtsev and the edge wave method
All this enormous scientific potential often transformed from quantity to quality. So, in 1962, a young scientist,
P.Ya. Ufimtsev published a monograph “The method of edge waves in the physical theory of diffraction.”
With the help of such calculations, solutions to a number of diffraction problems for a wedge and disk were obtained, and non-uniform parts of the current were found for these bodies. The theory of physical optics existing at that time did not take into account the uneven part of the current, which was concentrated near the kink. To put it more roughly, it turned out to be possible to more accurately describe the further behavior of electromagnetic waves when falling on surfaces with kinks and sharp edges. More accurately predict the structure of scattered waves. It would seem, what does aviation have to do with it?
Development in the USA
Let's move to the USA. At that time, American aircraft could not boast of their power. The first development of a stealth aircraft in the United States began in 1958. However, the attempts were unsuccessful. The planes were much inferior to the Soviet ones, as demonstrated by the Vietnam War. Their basic science lagged behind. They had not heard about the edge wave method until they accidentally (or maybe not) translated Ufimtsev’s monograph in 1971. Having got their hands on the theory, the missing link, they began development. The project received funding of several billion dollars. Lockheed and Northrop, using Ufimtsev’s theory and computer modeling (this was already possible in the USA in 1975), were able to develop in 1983 the first aircraft completely made using Stealth technology (Stealth - cunning) - the F-117 Night Hawk. one of the F-117 developers stated
Many journalists began to write about the "invisible plane." But this is absolutely incorrect. Firstly, it is visible in the optical range, and secondly, it is inconspicuous in a certain sector of angles for certain radars.
I will share my calculation, carried out while still at the institute. If you look at the scattering diagram of the F-117, you can see how much lower its frontal RCS is. Thanks to this shape, the aircraft re-radiates most of the energy of electromagnetic waves into the upper hemisphere. In the direction of the radar, the radiation is extremely small. The ESR of the F-117 aircraft when irradiated from frontal and tail angles is reduced to 0.1-0.01 m2, which is approximately 100-200 times less than that of a conventional aircraft of similar sizes.
Pyotr Yakovlevich Ufimtsev, who at that time was working at a research institute in Moscow, did not know anything about the fact that an airplane had been developed in the USA based on his monograph. Imagine his surprise when, in 1990, he went to a conference in the USA by invitation, after finishing his report, the audience gave him a standing ovation, but he could not understand how he had gained such fame. In the USSR he was known to few people. But his monograph became a reference book for Lokcheed Martin engineers. After so many years, he got what he deserved. True, not in my home country. In the 90s, no one in Russia needed scientific personnel, the economic crisis and meager salaries. Ufimtsev goes to work at the University of California at Los Angeles as a visiting professor and participates in the creation of the B2 strategic bomber. Now Ufimtsev is 88 years old and lives in America.
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domingo, 24 de dezembro de 2023
Design and characterization of a three-phase current source inverter using 1.7kV SiC power devices for photovoltaic applications Luis Gabriel Alves Rodrigues THÈSE Pour obtenir le grade de DOCTEUR DE LA COMMUNAUTE UNIVERSITE GRENOBLE ALPES Spécialité : Génie Electrique
Design and characterization of a three-phase current
source inverter using 1.7kV SiC power devices for
photovoltaic applications
Luis Gabriel Alves Rodrigues
THÈSE
Pour obtenir le grade de
DOCTEUR DE LA COMMUNAUTE
UNIVERSITE GRENOBLE ALPES
Spécialité : Génie Electrique
Abstract
Classically, the energy conversion architecture found in photovoltaic (PV)
power plants includes solar arrays delivering a maximum voltage of 1kV followed
by a step-up chopper connected to a three-phase Voltage Source Inverter. This
multistage conversion system (DC/DC + DC/AC) is then connected to the
medium-voltage grid through a low-voltage/medium-voltage transformer. In order
to simplify the PV systems, this research work focuses on the study and
implementation of a DC/AC topology employing a single power processing stage:
the three-phase Current Source Inverter (CSI). To deal with the inconvenient of
high conduction losses when implementing this topology, wide-bandgap Silicon
Carbide (SiC) semiconductors are used, allowing to efficiently convert energy
while keeping a relatively high switching frequency. Nonetheless, since the
available power semiconductor modules on the market are not compatible with
the CSI, a novel 1.7kV SiC-based voltage bidirectional module is developed in the
context of this thesis. Hence, the dynamic characterization of the new SiC device
is carried out and serves as the basis for the design of a 60kW CSI prototype.
Finally, the inverter efficiency is evaluated at nominal operating conditions,
employing both a calorimetric and electrical methods. The obtained results
confirm the CSI ability to operate efficiently at high switching frequencies
(η>98.5% @60kHz). The originality of this work lies mainly in the design,
characterization and implementation of the new 1.7kV full-SiC power module
adapted to the CSI topology.
Keywords: Power electronics, DC/AC converters, Current Source Inverter (CSI),
Silicon Carbide (SiC), Photovoltaics, Power module.
VIEW FULL TEXT: https://theses.hal.science/tel-02476261v1/document
terça-feira, 19 de dezembro de 2023
6배압 정류기를 이용한 고전압 전원장치에 관한 연구 (A Study of the High Voltage Power Supply using a Sixfold Voltage-Multiplying Rectifier) 안태영*․길용만** (Tae-Young Ahn․Yongl-Man Gil)----Journal of the Korean Institute of IIIuminating and Electrical Installation Engineers (2015) 29(2):19~26
Abstract
This paper presents design, fabrication, and performance evaluation of a high voltage power supply
for Carbon Nano Tube-based planar light sources. The proposed power supply employs an LLC
resonant half-bridge converter and a sixfold voltage-multiplying rectifier. Steady-state characteristics
of the voltage-multiplying rectifier are analyzed and used to derive the input-to-output voltage
conversion ratio of the power supply. The input-to-output frequency response characteristics of the
LLC tank circuit are analyzed and utilized in designing a proto-type power supply which produces a 15
KV output using a 400 V input source. The high-voltage transformer is fabricated using a sectional
bobbin structure with an epoxy impregnation, in order to provide sufficient insulation for high voltage
operations. The performance of the proposed power supply is confirmed with stable and reliable
operations at the 15 KV output from no load to nominal load conditions. The proposed power supply is
well suited as an electric ballast required stable operations of Carbon Nano Tube-based planar light
sources.
sexta-feira, 8 de dezembro de 2023
Modeling and Design of Medium-Frequency Transformers for Future Medium-Voltage Power Electronics Interfaces A thesis submitted to attain the degree of DOCTOR OF SCIENCES of ETH ZURICH (Dr. sc. ETH Zurich) presented by THOMAS PAUL HENRI GUILLOD
Modeling and Design of Medium-Frequency Transformers for Future Medium-Voltage Power Electronics Interfaces A thesis submitted to attain the degree of DOCTOR OF SCIENCES of ETH ZURICH (Dr. sc. ETH Zurich) presented by THOMAS PAUL HENRI GUILLOD MSc ETH born on 09.09.1989 citizen of Bas-Vully, Switzerland accepted on the recommendation of Prof. Dr. Johann W. Kolar, examiner Prof. Dr. Dražen Dujić, co-examiner 2018
Newly available fast-switching Medium-Voltage (MV) Silicon-Carbide
(SiC) semiconductors are setting new limits for the design space of MV
converters. Unprecedented blocking voltages (up to 15 kV), higher switching
frequencies (up to 200 kHz), higher commutation speeds (up to 100 kVμs),
and high temperature operation can be reached. These semiconductors feature
reduced switching and conduction losses and, therefore, allow for the
realization of extremely efficient and compact MV converters. Moreover, the
increased blocking voltage allows the usage of simple single-cell topologies
for MV converters instead of complex multi-cell systems. Hence, the MV SiC
semiconductors are interesting for many applications such as locomotive traction
chains, datacenter power supply chains, collecting grids for renewable
energies, high power electric vehicle chargers, and more-electric aircraft.
Most of these applications require an isolated DC-DC converter for providing
voltage scaling and galvanic isolation. However, the increased voltages
and frequencies allowed by MV SiC semiconductors create new challenges for
the design of Medium-Frequency (MF) transformers, which start to become
the bottleneck of isolated DC-DC converters in terms of power density and
efficiency. More specifically, the winding losses (due to skin and proximity
effects) and the core losses (due to eddy currents and hysteresis) are rapidly
increasing and mitigate the advantages (e.g., the reduced volt-second product
applied to the magnetic core) obtained with the increased operating frequencies.
Moreover, the MV/MF PWM voltages with fast switching transitions are
also particularly critical for the insulation of MF transformers and can lead to
additional losses, thermal breakdowns, and partial discharge induced breakdowns.
Finally, the MF transformers of DC-DC converters should feature
reduced losses (efficiencies above 99:5 %) in order to match the performance
offered by the MV SiC semiconductors.
The main focus of this thesis is, thus, set on the design of highly efficient
MV/MF transformers employed in isolated DC-DC converters. First, a
theoretical analysis of MF transformers is conducted in order to extract the
fundamental performance limitations of such devices. The nature of the optimal
designs is examined with analytical models, scaling laws, and numerical
optimizations. Afterwards, several points are identified as critical and are
studied in more detail.
First, the impact of model uncertainties and parameter tolerances on MF
transformers is examined with statistical methods in order to highlight the
achievable modeling accuracy. Then, a 2.5D numerical field simulation method
is presented for assessing the impact of non-idealities on the losses produced
vii
Abstract
by litz wire windings (e.g., twisting scheme and pitch length). Afterwards,
the impact of MV/MF PWM voltages with fast switching transitions on the
insulation is examined. The electric field pattern is analyzed inside, at the surface,
and outside the insulation and shielding methods are proposed. Finally,
the dielectric loss mechanisms of dry-type insulation materials under PWM
voltages is examined in detail. Different analytical expressions are proposed
for extracting the insulation losses and it is found that the dielectric losses can
be significant for MV/MF transformers operated with MV SiC semiconductors.
Design guidelines are proposed for the selection of appropriate insulation
materials for MV/MF applications and silicone elastomer is identified as an
interesting choice. All the presented results are verified with measurements
conducted on different MF transformer prototypes.
The derived models and results are applied to a MV isolated DC-DC converter,
which is part of a MV AC (3:8 kV, phase-to-neutral RMS voltage) to LV
DC (400 V) Solid-State Transformer (SST) demonstrator. This SST is aimed to
supply future datacenters directly from the MV grid. The considered 25 kW
DC-DC converter operates between a 7 kV DC bus and a 400 V DC bus. The
usage of 10 kV SiC MOSFETs allows for the realization of the converter with
a single-cell DC-DC Series-Resonant Converter (SRC). The DC-DC SRC is
operated at 48 kHz as a DC Transformer (DCX) and the modulation scheme,
which allows for Zero-Voltage Switching (ZVS) of all semiconductors, is examined
in detail. The realized MV/MF transformer prototype features a power
density of 7:4 kWl (121 kWin3, 4:0 kWkg, and 1:8 kWlb) and achieves a
full-load efficiency of 99:65 %. The complete DC-DC converter achieves an
efficiency of 99:0 % between 50 % and 100 % load with a power density of
3:8 kWl (62Win3, 2:9 kWkg, and 1:3 kWlb). The results obtained with
the constructed DC-DC converter, which are significantly beyond the stateof-
the-art, demonstrate that MV/MF transformers can utilize the possibilities
offered by the new MV SiC semiconductors. .
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