Elementary Mathematics ( Selected Topics And Problem Solving) Mir by G. Dorofeev; M. Potapov; N. Rozov

 

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https://archive.org/details/dorofeev-potapov-rozov-elementary-mathematics-selected-topics-and-problem-solving-mir-1982/mode/2up

Manual de matemática para candidatos universitários Questões selecionadas em matemática elementar-Georgy Vladimirovich Dorofeev Mikhail Konstantinovich Potapov Nikolay Hristovich Rozov

 

VIEE FULL BOOk: https://www.mediafire.com/file/tggbagl0w7qjpfi/posobie-vvuzy-1976.pdf/file

AMARU MURU MYSTERIOUS DIMENSIONAL PORTAL IN PUNO-PERU

 

Is SiC a Game Changer-CPES?-The Center for Power Electronics Systems-TUTORIAL CONGRESSO BRASILEIRO DE POTÊNCIA 2015-COBEP2015-SOUTHERN POWER ELECTRONIC CONFERENCE

 

Abstract

Over the last two decades there has been much exhilaration about the anticipated transformation of power electronics that SiC devices would bring, which has been accompanied by tremendous efforts by governments and companies around the developed world to meet those expectations. The successful commercial use of SiC Schottky diodes over the last ten years has helped improve efficiency and reduce size of power converters in several applications, but only in the last couple of years, several SiC active switching devices became commercially available at reasonable cost and volume. CPES has been involved all along in characterizing the newest SiC devices and evaluating their potential to change existing applications and open completely new ones.

CPES-The Center for Power Electronics Systems (CPES), with annual research expenditures of $6-7 million dollars, is dedicated to improving electrical power processing and distribution that impact systems of all sizes – from battery-operated electronics to vehicles to regional and national electrical distribution systems.

VIEW FULL TUTORIAL:http://www.cobepspec2015.ufc.br/wp-content/uploads/2015/12/t1.pdf

DEVELOPMENT OF 30KVA INVERTER USING SIC MOSFET FOR 180◦C AMBIENT TEMPERATURE OPERATION Feng Qi1, Miao Wang, Longya Xu, Bo Zhao, Zhe Zhou 1The Ohio State University, USA -Smart Grid Research Institute of SGCC, China

DEVELOPMENT OF 30KVA INVERTER USING SIC MOSFET

FOR 180◦C AMBIENT TEMPERATURE OPERATION

Feng Qi1, Miao Wang1, Longya Xu1, Bo Zhao2, Zhe Zhou2

1The Ohio State University, USA

2Smart Grid Research Institute of SGCC, China

COBEP 2015 : 2015 IEEE 13th Brazilian Power Electronics Conference and 1st Southern Power Electronics Conference (COBEP/SPEC)

Abstract

 A 30kVA SiC MOSFET inverter is developed for 180°C ambient temperature operation.The entire inverter system is designed for high temperature (HT) except the DSP control circuit in room temperature environment. Power structure is designed using SiC MOSFETs, HT capacitors and a liquid cooling plate. The gate drivers with protections and power structure are placed in HT environment of 180○C. The prototype inverter has been built and successfully tested in 180○C environment at 30kVA for accumulative 5 hours without any problems.

VIEW FULL PAPER  :

https://www.mediafire.com/file/gpd9w5bf75g7815/DEVELOPMENT+OF+30KVA+INVERTER+USING+SIC+MOSFET550.pdf/file