DEVELOPMENT OF 30KVA INVERTER USING SIC MOSFET FOR 180◦C AMBIENT TEMPERATURE OPERATION Feng Qi1, Miao Wang, Longya Xu, Bo Zhao, Zhe Zhou 1The Ohio State University, USA -Smart Grid Research Institute of SGCC, China

DEVELOPMENT OF 30KVA INVERTER USING SIC MOSFET

FOR 180◦C AMBIENT TEMPERATURE OPERATION

Feng Qi1, Miao Wang1, Longya Xu1, Bo Zhao2, Zhe Zhou2

1The Ohio State University, USA

2Smart Grid Research Institute of SGCC, China

COBEP 2015 : 2015 IEEE 13th Brazilian Power Electronics Conference and 1st Southern Power Electronics Conference (COBEP/SPEC)

Abstract

 A 30kVA SiC MOSFET inverter is developed for 180°C ambient temperature operation.The entire inverter system is designed for high temperature (HT) except the DSP control circuit in room temperature environment. Power structure is designed using SiC MOSFETs, HT capacitors and a liquid cooling plate. The gate drivers with protections and power structure are placed in HT environment of 180○C. The prototype inverter has been built and successfully tested in 180○C environment at 30kVA for accumulative 5 hours without any problems.

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