Radiation resistance properties of electronic devices
interacting with different radiation sources
Sapienza University of Rome
PhD in Accelerator Physics (XXXVI cycle)
Abstract
In high-radiation environments, such as those found in high-energy physics, space,
and ignition facilities, it is paramount to employ components and devices capable of
withstanding the stressful conditions imposed by these harsh settings. To understand
the radiation-induced effects and ensure the proper functioning of systems used
in these hostile conditions, preliminary tests of the devices against radiation are
necessary.
In this joint doctoral thesis, comprising work performed at La Sapienza University
of Rome, the Institut National de la Recherche Scientifique (INRS) in Canada, and
the ENEA Research Centers of Casaccia and Frascati in Italy, a study of radiationinduced damage on electronic devices was carried out. Various radiation sources and
characterization methods were employed for this purpose.
At the Advanced Laser Light Source (ALLS) laboratory of INRS, laser-accelerated
protons with a broad energy spectrum were used to test electronics with a new and
innovative stress test source. More conventional sources for irradiation tests, such
as 60Co gamma radiation available at the Calliope facility of the ENEA Casaccia
R.C., and protons and neutrons from the TOP-IMPLART facility and the Frascati
Neutron Generator, respectively, located at the ENEA Frascati R.C., were also used.
To further enrich the characterization of the electronic devices, electron irradiations are planned at the REX facility of the ENEA Frascati R.C. To determine the
most suitable irradiation conditions at REX, a dosimetric intercalibration between
the Calliope facility and the REX facility was performed within the framework
of the ASI Supported Irradiation Facilities (ASIF) program. The results of this
intercalibration are presented.
In the final part of the work, the radiation resistance properties of two types of
electronic devices were examined by performing parametric tests on the components
before and after irradiation with various radiation sources. Additionally, the Total
Ionizing Dose (TID) effect and the displacement damage caused by the Non-Ionizing
Energy Loss (NIEL) contribution were analyzed for all the stress tests performed.
Specifically, for each radiation source used, the dose deposited by ionizing processes
and the dose deposited by non-ionizing processes were calculated. This procedure
made it possible to determine the dose required by different types of radiation to
cause the same level of damage, allowing a comparison of the irradiation efficiency
of laser-driven protons with conventional radiation sources.
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