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segunda-feira, 28 de julho de 2025

Radiation resistance properties of electronic devices interacting with different radiation sources Sapienza University of Rome PhD in Accelerator Physics (XXXVI cycle) Beatrice D’Orsi -PhD thesis. Sapienza University of Rome


 Radiation resistance properties of electronic devices interacting with different radiation sources Sapienza University of Rome PhD in Accelerator Physics (XXXVI cycle) 

 Abstract In high-radiation environments, such as those found in high-energy physics, space, and ignition facilities, it is paramount to employ components and devices capable of withstanding the stressful conditions imposed by these harsh settings. To understand the radiation-induced effects and ensure the proper functioning of systems used in these hostile conditions, preliminary tests of the devices against radiation are necessary. In this joint doctoral thesis, comprising work performed at La Sapienza University of Rome, the Institut National de la Recherche Scientifique (INRS) in Canada, and the ENEA Research Centers of Casaccia and Frascati in Italy, a study of radiationinduced damage on electronic devices was carried out. Various radiation sources and characterization methods were employed for this purpose. At the Advanced Laser Light Source (ALLS) laboratory of INRS, laser-accelerated protons with a broad energy spectrum were used to test electronics with a new and innovative stress test source. More conventional sources for irradiation tests, such as 60Co gamma radiation available at the Calliope facility of the ENEA Casaccia R.C., and protons and neutrons from the TOP-IMPLART facility and the Frascati Neutron Generator, respectively, located at the ENEA Frascati R.C., were also used. To further enrich the characterization of the electronic devices, electron irradiations are planned at the REX facility of the ENEA Frascati R.C. To determine the most suitable irradiation conditions at REX, a dosimetric intercalibration between the Calliope facility and the REX facility was performed within the framework of the ASI Supported Irradiation Facilities (ASIF) program. The results of this intercalibration are presented. In the final part of the work, the radiation resistance properties of two types of electronic devices were examined by performing parametric tests on the components before and after irradiation with various radiation sources. Additionally, the Total Ionizing Dose (TID) effect and the displacement damage caused by the Non-Ionizing Energy Loss (NIEL) contribution were analyzed for all the stress tests performed. Specifically, for each radiation source used, the dose deposited by ionizing processes and the dose deposited by non-ionizing processes were calculated. This procedure made it possible to determine the dose required by different types of radiation to cause the same level of damage, allowing a comparison of the irradiation efficiency of laser-driven protons with conventional radiation sources.

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