SINGLE -PHASE PROTOTYPE WITH INFINEON 1700V-JFETS
THREE-PHASE PROTOTYPE WITH INFINEON 1700V-JFETS
ON THE PERSPECTIVES OF WIDE-BAND GAP POWER DEVICES IN ELECTRONIC-BASED POWER CONVERSION FOR RENEWABLE SYSTEMS AUTHOR SAMUEL VASCONCELOS ARAÚJO
THESIS THE ACADEMIC DEGREE OF DOKTOR DER INGENIEUR-WISSENSHAFTEN (DR-ING).FACULTY OF ELECTRICAL ENGINEERING COMPUTER SCIENCES OF THE UNIVERSITY OF KASSEL GERMANY
FOREWORD
Power Electronics is taking an increasingly important role in our dailt lives, as it is the keystone not only to be efficient , but also cost effective and reliable use of electric energy in all possible fields of aplication;ranging from power supply from renewable energy sources to industry,IT and transportation.
The first revolution in this field of technology came in the 1960 with the viability of switched-mode power conversion ,owning to the emergence of BJTs operating at higher speeds.The development of MOSFETs and later IGBTs provided a futher step in the direction towards higher frequency and power levels.
The advent of power device based on silicon carbide (SiC) and gallium nitride (GAn) is curently pointing in the direction of a second revolution,whwre several paradigms concernig the design and performance of power conversion stages will be broken.
FULL THESIS
http://www.uni-kassel.de/upress/online/frei/978-3-86219-486-5.volltext.frei.pdf
Dr.Ing. SAMUEL VASCONCELOS ARAÚJO (FACULTY OF ELECTRICAL ENGINEERING COMPUTER SCIENCES OF THE UNIVERSITY OF KASSEL GERMANY) ,GRADUATION STUDENT IN THE FEDERAL UNIVERSITY OF CEARA (UFC-2005)
BRASIL WORKING IN THE GEPEC LABORATORY.
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