A Study on the Efficiency Improvement of Inverter for Automotive using SiC MOSFET SiC MOSFET를 이용한 차량용 INVERTER 효율 향상에 관한 연구--KOREA NATIONAL UNIVERSITY OF TRANSPORTATION

 A Study on the Efficiency Improvement of Inverter for Automotive using SiC MOSFET

 SiC MOSFET를 이용한 차량용 INVERTER 효율 향상에 관한 연구 

Author

Seongki Ahn

KOREA NATIONAL UNIVERSITY OF TRANSPORTATION

Abstract 

DC-AC inverter units for vehicles are supplied with input voltage DC 12V to 24V using vehicle batteries and converted to single phase AC 220V. Automotive DC-AC inverters have been used in some places with generators where electricity cannot be drawn up, such as election campaign vehicles, but they are increasingly turning into inverters due to engine noise and smoke problems in generators. In particular, the need to use AC power in camping vehicles and food trucks increased due to the influence of the five-day workweek, and the increasing use of non-starting air conditioners in large vehicles such as trailers. In addition, with the increasing use of personal electrical appliances such as laptops and mobile phones, the demand for DC-AC inverters for vehicles is expected to surge in the coming months in multi-use transportation means such as buses and railway vehicles. MOSFET, which is a power semiconductor device, is a major component that is needed for DC-AC inverters for vehicles. Although silicon (Si : Silicon) power semiconductor device has been used as a key power conversion component of inverter system until now, achieving fast/lightening and high power generation of power unit that consists of silicon element is reaching its limit. Silicon carbide (SiC : Silicon Carbide) power semiconductor is the next generation power semiconductor to replace the limit situation that Si power semiconductor has. In this paper, we measured the loss of conduction, switching loss, efficiency characteristics, and the temperature of the main parts for Si / SiC MOSFET. In the conduction loss experiment, the loss value of SiC MOSFET compared to Si MOSFET for one cycle is approximately 61.3(%). The switching loss experiment showed that SiC MOSFET losses were small, with about 49.6(%) at Turn-on and approximately 49.2(%) at Turn-off against Si MOSFET. This was immediately confirmed to be low temperature in each part of the inverter. In particular, it was found that the temperature difference at the transformer core with the highest temperature varies from the load of 600(W) to 15.1(°C). In the experiment of efficiency characteristics, the maximum efficiency of 93.5(%) was obtained, and the efficiency improvement of up to 2.8(%) compared to the inverter with Si MOSFET was achieved. The temperature measurement test also shows that most parts temperature is low in the inverter employing SiC MOSFET. The application of SiC MOSFET to the efficiency of inverter was proved to be reasonable as the performance of inverter with SiC

In this paper, we measured the loss of conduction, switching loss, efficiency characteristics, and the temperature of the main parts for Si / SiC MOSFET. In the conduction loss experiment, the loss value of SiC MOSFET compared to Si MOSFET for one cycle is approximately 61.3(%). The switching loss experiment showed that SiC MOSFET losses were small, with about 49.6(%) at Turn-on and approximately 49.2(%) at Turn-off against Si MOSFET. This was immediately confirmed to be low temperature in each part of the inverter. In particular, it was found that the temperature difference at the transformer core with the highest temperature varies from the load of 600(W) to 15.1(°C). In the experiment of efficiency characteristics, the maximum efficiency of 93.5(%) was obtained, and the efficiency improvement of up to 2.8(%) compared to the inverter with Si MOSFET was achieved. The temperature measurement test also shows that most parts temperature is low in the inverter employing SiC MOSFET. The application of SiC MOSFET to the efficiency of inverter was proved to be reasonable as the performance of inverter with SiC

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