A Study on the Efficiency Improvement of Inverter
for Automotive using SiC MOSFET SiC MOSFET를 이용한 차량용
INVERTER 효율 향상에 관한 연구
KOREA NATIONAL UNIVERSITY OF TRANSPORTATION
Abstract
DC-AC inverter units for vehicles are supplied with input voltage
DC 12V to 24V using vehicle batteries and converted to single
phase AC 220V.
Automotive DC-AC inverters have been used in some places with
generators where electricity cannot be drawn up, such as election
campaign vehicles, but they are increasingly turning into inverters
due to engine noise and smoke problems in generators. In particular,
the need to use AC power in camping vehicles and food trucks
increased due to the influence of the five-day workweek, and the
increasing use of non-starting air conditioners in large vehicles such
as trailers. In addition, with the increasing use of personal electrical
appliances such as laptops and mobile phones, the demand for
DC-AC inverters for vehicles is expected to surge in the coming
months in multi-use transportation means such as buses and railway
vehicles.
MOSFET, which is a power semiconductor device, is a major
component that is needed for DC-AC inverters for vehicles.
Although silicon (Si : Silicon) power semiconductor device has been
used as a key power conversion component of inverter system until
now, achieving fast/lightening and high power generation of power
unit that consists of silicon element is reaching its limit. Silicon
carbide (SiC : Silicon Carbide) power semiconductor is the next
generation power semiconductor to replace the limit situation that Si
power semiconductor has.
In this paper, we measured the loss of conduction, switching loss,
efficiency characteristics, and the temperature of the main parts for
Si / SiC MOSFET.
In the conduction loss experiment, the loss value of SiC MOSFET
compared to Si MOSFET for one cycle is approximately 61.3(%).
The switching loss experiment showed that SiC MOSFET losses
were small, with about 49.6(%) at Turn-on and approximately
49.2(%) at Turn-off against Si MOSFET. This was immediately
confirmed to be low temperature in each part of the inverter. In
particular, it was found that the temperature difference at the
transformer core with the highest temperature varies from the load
of 600(W) to 15.1(°C).
In the experiment of efficiency characteristics, the maximum
efficiency of 93.5(%) was obtained, and the efficiency improvement
of up to 2.8(%) compared to the inverter with Si MOSFET was
achieved. The temperature measurement test also shows that most
parts temperature is low in the inverter employing SiC MOSFET.
The application of SiC MOSFET to the efficiency of inverter was
proved to be reasonable as the performance of inverter with SiC
In this paper, we measured the loss of conduction, switching loss,
efficiency characteristics, and the temperature of the main parts for
Si / SiC MOSFET.
In the conduction loss experiment, the loss value of SiC MOSFET
compared to Si MOSFET for one cycle is approximately 61.3(%).
The switching loss experiment showed that SiC MOSFET losses
were small, with about 49.6(%) at Turn-on and approximately
49.2(%) at Turn-off against Si MOSFET. This was immediately
confirmed to be low temperature in each part of the inverter. In
particular, it was found that the temperature difference at the
transformer core with the highest temperature varies from the load
of 600(W) to 15.1(°C).
In the experiment of efficiency characteristics, the maximum
efficiency of 93.5(%) was obtained, and the efficiency improvement
of up to 2.8(%) compared to the inverter with Si MOSFET was
achieved. The temperature measurement test also shows that most
parts temperature is low in the inverter employing SiC MOSFET.
The application of SiC MOSFET to the efficiency of inverter was
proved to be reasonable as the performance of inverter with SiC
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