Full-SiC Integrated Power Module Based on Planar Packaging Technology for High
Efficiency Power Converters in Aircraft Applications
O. Raab,
M. Guacci,
A. Griffo,
K. Kriegel,
M. Heller,
J. Wang,
D. Bortis,
M. Schulz,
J. W. Kolar
Full-SiC Integrated Power Module based on Planar Packaging Technology for High Efficiency Power Converters in Aircraft Applications
Oliver Raaba
, Mattia Guaccib
, Antonio Griffoc
, Kai Kriegela
, Morris Hellerb
, Jiabin Wangc
, Dominik Bortisb
, Martin
Schulza
, and Johann W. Kolarb
aSiemens AG, Corporate Technology, Munich, Germany
bPower Electronic Systems Laboratory, ETH Zurich, Zurich, Switzerland
cDepartment of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, UK
Abstract
Compact, light-weight, efficient and reliable power converters are fundamental for the future of More Electrical Aircraft
(MEA). Core elements supporting the electrification of the aerospace industry are power modules (PMs) employing
exclusively SiC MOSFETs. In order to fully exploit the high switching speeds enabled by SiC, and to address the
challenges arising from the parallelization of power devices, novel PM concepts must be investigated. In this paper,
highly symmetrical layouts, low inductance planar interconnection technologies, and integrated buffer capacitors are
explored to realize a high efficiency, fast-switching, and reliable full-SiC PM for MEA applications. A comprehensive
assessment of a number of performance metrics against state-of-the-art full-SiC PMs demonstrates the benefits of the
proposed design approach and manufacturing technologies. Moreover, by integrating temperature and current sensors,
intelligent functions, which are crucial for the safe application of power electronics in MEA, are added to the developed
PM. In this context, the use of MOSFETs’ Temperature Sensitive Electrical Parameters for online junction temperature
estimation is demonstrated, allowing for non-invasive, i.e. without the need for dedicated sensors, thermal monitoring.
Additionally, a highly compact gate driver, reducing the overall system volume and complexity, is designed and integrated
in the housing of the PM. Finally, switching waveforms are measured during operation of the PM at 500V and 200A,
proving the performance improvement enabled by the low inductance layout, the integrated snubber, and the gate driver.
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