Power Electronics Electrônica de Potência Página do Eng. Armando Cavero Miranda

No Blog Eletrônica de Potência você encontrará informações sobre teses,artigos,seminarios,congressos,tecnologias,cursos,sobre eletrônica potência. “TEMOS O DESTINO QUE MERECEMOS. O NOSSO DESTINO ESTA DE ACORDO COM OS NOSSOS MERITOS” ALBERT EINSTEIN. Imagination is more important than knowledge, for knowledge is limited while imagination embraces the entire world. EL FUTURO SE CONSTRUYE HOY,EL SUCESSO NO ES FRUTO DE LA CASUALIDAD,SE HUMILDE ,APRENDE SIEMPRE CADA DIA.

sexta-feira, 20 de julho de 2012

Seminar 1 IGBT Gate Drive Technologies

Seminar

Seminar 1 IGBT Gate Drive Technologies

Schedule

Tuesday, 11.09.2012, 09:00 - 12:30 hrs

Speaker

Reinhard Herzer, Semikron Eletronik GmbH & Co.KG, Germany

		Reinhard Herzer studied Electrical Engineering and received 1984 his PhD in the field of Microelectronics and 1992 his Habilitation in the field of Power Devices and Smart Power ICs from the Ilmenau Technical University. He joined Semikron Electronics Nuremberg, Germany in 1995 as head of the MOSFET, IGBT and IC research department. Here he is responsible for the introduction of new power device generations as well as driver- and sensor- IC in new power modules and systems. Further he is Associated Professor at the Technical University of Ilmenau were he teaches and coaches students and PhD students.

Language

English

Description

Fundamentals- Power control system
- Inverter principle, frequency inverter
- Methods of potential separation
IGBT devices
- Physical basics, parameter and characteristics
- Switching behaviour, switching times and losses
Driver fundamentals
- Gate driver topologies
- Transmission principles of control signal and driving energy
- Galvanic isolation and level shift
- Variants of power supply: DC/DC converter, bootstrap power supply
- Gate driving technologies and different gate drive circuits
Protection techniques- Under voltage protection
- Short pulse suppression and interlock
- Different kinds of short circuit protection
- Hard and soft turn-off
Calculation and selection of drivers
- Information and parameters, e.g. gate charge, frequency output voltage and current
Using IGBT drivers
- Input and output signals, VCE-diode
- Dimensioning and design of gate resistors
- Gate Clamping
- Some questions of system design
Overview about available gate drivers- Hybrid driver
- Integrated driver IC

PCIM SOUTH AMERICA SAO PAULO 11/09/2012 Seminar 2 Power Seminconductor Devices - Technology Trends and Application Challenges

Seminar

Seminar 2 Power Seminconductor Devices - Technology Trends and Application Challenges

Schedule

Tuesday, 11.09.2012, 09:00 - 12:30 hrs

Speaker

Leo Lorenz, ECPE, D

		Prof.Dr.Leo Lorenz received the Dipl. Ing. Degree from TU-Berlin and the Dr.-Ing. Degree from the University of Munich, Germany in 1976 and 1984 respectively. From 1976 till 1980 he was with AEG, R&D-center for Power Electronics- in Berlin. In 1984 he joined Siemens Semiconductor Division which became Infineon Technologies AG in 1999. Since this time he has been working on Power Semiconductor & Power IC’s in different functions and responsibilities. As a senior principal he was responsible for system engineering of industrial technologies and for the time being located in Munich. He published over 300 technical papers and has many patents in these fields. In 2001 he was nominated to become Professor for System Integration at the University of Ilmenau (Germany). He is the president of the ECPE (European Center of Power Electronics), an IEEE Fellow, a member of German Academy of Science and received several best paper and innovation awards.

Language

English

Description

Course Target:This course is targeting R&D engineers from Industry and Academia involved in development, design and optimization of power electronic converters.
The Megatrends of our society such as Energy Efficiency, E-Mobility, Renewable Energies and SMART Grid are asking for Smart Power Electronic Solutions. Power Electronics is the technology associated with the efficient power conversion, precise control and conditioning of electric energy from the source up to the load.
Power Semiconductor devices are an enabling technology to meet these requirements. The major electrical and thermal improvement of the new generation of power devices is coming from the overall silicon chip utilization. Based on this idea the device technology development follows a chip horizontal optimization e.g. high cell densities, new trench gate structures and a vertical optimization to minimize drift layer and reduce the On-State losses significantly. This power device mainstream technology development is applied to all device types such as the IGBT, Fast Recovery Diode, Super Junction Transistor and low Voltage MOSFET.

The reliability and ruggedness of these new power semiconductors is driven by an advanced chip interfacing and packaging technology. For ultra high efficiency and ultra high power density fast switching devices have been developed. However it has to be considered that the application engineer is faced with new challenges of how to manage all the parasitics, thermal management and circuit set up.

Course Contents:* Introduction of Focus Application
* Basics about power semiconductor devices
* Fast switching Diodes (Freewheeling Diodes) and device limits
  - Dynamic Performance & Limits
* IGBT development and challenges in Application
  - Static and dynamic performance
  - Overload characteristics, short circuit capability and destruction modes
  - Avalanche characteristics
  - di/dt, dv/dt-limits and physical effect
  - Driving and protection circuit for low- and high-power devices
     (Galvanic Isolation, short circuit and Over Voltage Protection)
  - Impact of fast switching to circuit and device parasitics
  - Thermal management,
* Device Reliability and Failure Mechanism

11. - 13.09.2012
São Paulo

Power Electronics South America 2012
An event sponsored by PCIM