AMARU MURU MYSTERIOUS DIMENSIONAL PORTAL IN PUNO-PERU

 

Is SiC a Game Changer-CPES?-The Center for Power Electronics Systems-TUTORIAL CONGRESSO BRASILEIRO DE POTÊNCIA 2015-COBEP2015-SOUTHERN POWER ELECTRONIC CONFERENCE

 

Abstract

Over the last two decades there has been much exhilaration about the anticipated transformation of power electronics that SiC devices would bring, which has been accompanied by tremendous efforts by governments and companies around the developed world to meet those expectations. The successful commercial use of SiC Schottky diodes over the last ten years has helped improve efficiency and reduce size of power converters in several applications, but only in the last couple of years, several SiC active switching devices became commercially available at reasonable cost and volume. CPES has been involved all along in characterizing the newest SiC devices and evaluating their potential to change existing applications and open completely new ones.

CPES-The Center for Power Electronics Systems (CPES), with annual research expenditures of $6-7 million dollars, is dedicated to improving electrical power processing and distribution that impact systems of all sizes – from battery-operated electronics to vehicles to regional and national electrical distribution systems.

VIEW FULL TUTORIAL:http://www.cobepspec2015.ufc.br/wp-content/uploads/2015/12/t1.pdf

DEVELOPMENT OF 30KVA INVERTER USING SIC MOSFET FOR 180◦C AMBIENT TEMPERATURE OPERATION Feng Qi1, Miao Wang, Longya Xu, Bo Zhao, Zhe Zhou 1The Ohio State University, USA -Smart Grid Research Institute of SGCC, China

DEVELOPMENT OF 30KVA INVERTER USING SIC MOSFET

FOR 180◦C AMBIENT TEMPERATURE OPERATION

Feng Qi1, Miao Wang1, Longya Xu1, Bo Zhao2, Zhe Zhou2

1The Ohio State University, USA

2Smart Grid Research Institute of SGCC, China

COBEP 2015 : 2015 IEEE 13th Brazilian Power Electronics Conference and 1st Southern Power Electronics Conference (COBEP/SPEC)

Abstract

 A 30kVA SiC MOSFET inverter is developed for 180°C ambient temperature operation.The entire inverter system is designed for high temperature (HT) except the DSP control circuit in room temperature environment. Power structure is designed using SiC MOSFETs, HT capacitors and a liquid cooling plate. The gate drivers with protections and power structure are placed in HT environment of 180○C. The prototype inverter has been built and successfully tested in 180○C environment at 30kVA for accumulative 5 hours without any problems.

VIEW FULL PAPER  :

https://www.mediafire.com/file/gpd9w5bf75g7815/DEVELOPMENT+OF+30KVA+INVERTER+USING+SIC+MOSFET550.pdf/file

LLC DC to DC 공진 컨버터의 고주파 변압기 최적화 설계에 관한 연구 A study on an optimal design of the high frequency transformer in LLC DC to DC resonant converter -Jong-Hae Kim

 LLC DC to DC 공진 컨버터의 고주파 변압기 최적화 설계에 관한 연구 A study on an optimal design of the high frequency transformer in LLC DC to DC resonant converter 김 종 해* 

★ Jong-Hae Kim* 

 Abstract 

This paper presents an optimal design of the slim type high frequency transformer used in the LLC DC to DC resonant converter for 65-inch UHD-TV with the rated power of 315W. This paper also performs an optimal design of the slim type high frequency through core loss analysis, AC winding loss analysis, and optimization design of the winding arrangement of the LLC resonant transformer. Particularly, the high-efficiency and slim type high frequency transformer based on the obtained results from theoretical analysis in this paper is constructed in the interleaved and vertical winding structures of its transformer to realize the winding method of automatic type and minimize AC winding loss. The primary and secondary windings of the slim type high frequency transformer the vertical winding structure proposed in this paper used the Litz-wire windings, PCB and copper plate windings, respectively. Finally, an optimal design of the slim type high frequency transformer proposed in this paper was carried out through the experimental results to confirm the validity of theoretical analysis based on the simulation results using Maxwel

j.inst.Korean.electr.electron.eng.Vol.27,No.4,587~600,December 2023 논문번호 23-04-31 https：//doi.org/10.7471/ikeee.2023.27.4.587l 2D and 3D tool.

VIEW FULL TEXT:

https://www.mediafire.com/file/8lztogjj0ey6kdh/A+study+on+an+optimal+design+of+the+high+frequency+transformer+in+LLC+DC+to+DC+resonant+converter.pdf/file

ORIGINAL SOURCE:https://ikeee.jams.or.kr/co/locale.kci?lang=en_US

단상 태양광 발전용 고효율 벅부스트 하프브리지 인버터 A High-efficiency Buck-boost Half-bridge Inverter for Single-phase Photovoltaic Generation-Hyung-Min Ryu

단상 태양광 발전용 고효율 벅부스트 하프브리지 인버터 A High-efficiency Buck-boost Half-bridge Inverter for Single-phase Photovoltaic Generation 류 형 민* ★ Hyung-Min Ryu*

 j.inst.Korean.electr.electron.eng.Vol.27,No.4,450~455,December 2023

 Abstract 

Among single-phase photovoltaic inverters that can avoid excessive leakage current caused by the large parasitic capacitance of photovoltaic panels, a boost converter followed by a half-bridge inverter is the simplest and has the smallest leakage current. However, due to the high DC-link voltage, the rated voltage of the switching devices is high and the switching loss is large. This paper proposes a new circuit topology which can operate as a buck-boost inverter by adding two bidirectional switches to the output side of the half-bridge inverter instead of removing the boost converter. By reducing two stages of power conversion through the high-voltage DC-link to one stage, power loss can be reduced without increasing costs and leakage current. The feasibility of the proposed circuit topology is verified by computer simulation and power loss calculation.

 VIEW FULL TEXT:https://www.mediafire.com/file/k51fa1gx4e6wuv6/A+High-efficiency+Buck-boost+Half-bridge+Inverter+for+Single-phase+Photovoltaic+Generation-Hyung-Min+Ryu.pdf/file