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domingo, 10 de agosto de 2025

100kW, 10kHz Medium Frequency Transformer Design Optimization and Experimental Verification Marko Mogorovic, Student Member, IEEE, Drazen Dujic, Senior Member, IEEE


 100kW, 10kHz Medium Frequency Transformer Design Optimization and Experimental Verification Marko Mogorovic, Student Member, IEEE, Drazen Dujic, Senior Member, IEEE 

 Abstract—This paper describes a novel, model based, design optimization methodology for high-power medium frequency transformers for medium-voltage high-power electronic applications, namely emerging solid state transformers. Presented procedure enables the designer to interactively select the most optimal design in a simple and intuitive way, while inherently offering flexibility in terms of various design alternatives, depending on the component availability. The core of the design algorithm is explained in detail together with all of the relevant modeling and technical challenges associated with realization of a prototype. A 100 kW, 10 kHz medium frequency transformer prototype has been designed according to the presented algorithm, practically realized and thoroughly tested in order to verify the theoretical design.

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terça-feira, 29 de julho de 2025

Conversores CC-CC com Elevado Ganho Estático Baseados na Associação e na Integração dos Conversores Boost Modificado e SEPIC-André M. Senderski Universidade Tecnológica Federal do Paraná Francisco J. Viglus Universidade Tecnológica Federal do Paraná Mário L. da Silva Martins Universidade Federal de Santa Maria Carlos Henrique Illa Font Universidade Tecnológica Federal do Paraná


 


Conversores CC-CC com Elevado Ganho Estático Baseados na Associação e na Integração dos Conversores Boost Modificado e SEPIC
André M. Senderski Universidade Tecnológica Federal do Paraná
 Francisco J. Viglus Universidade Tecnológica Federal do Paraná 
 Mário L. da Silva Martins Universidade Federal de Santa Maria 
 Carlos Henrique Illa Font Universidade Tecnológica Federal do Paraná 
 ABSTRACT 
This paper presents a study of two non-isolated DC-DC converter topologies with high static gain, basedon the association and integration of modified Boost and SEPIC converters. The associated topology usestwo controlled switches, while the integrated one employs only one. When performing the integration, theswitching cell known asR2P2is obtained. The proposed converters achieve high voltage gains ,making them suitable for applications where a reduced number of components is desirable, commonconnection between input and output, simplifying the control and command circuit. The paper presentsthe details of the derivation of the topologies and the operating principle including the topological stagesand main waveforms, in addition to the comparative analysis with similar converters previously proposedin the literature. To validate the analyses, two prototypes with a nominal power of 200 W, dimensionedto operate with an input voltage of 26 V and an output voltage of 260 V are presented. The convertersoperate at a switching frequency of 50 kHz, with an efficiency of 93.4 % for the associated converter and89.2 % for the integrated converter at rated power.

Thermoelectric Characterization of IGBT Power Modules: An Approach by Static and Dynamic Methods-Deivid F. de Souza1,∗, Diego S. Greff11Federal University of Santa Catarina, PPGESE, Joinville, SC, Brazil


 
Eletronica de Potencia, Rio de Janeiro, v. 30, e202510, 2025 Thermoelectric Characterization of IGBT Power Modules: An Approach by Static and Dynamic Methods-Deivid F. de Souza1,∗, Diego S. Greff11Federal University of Santa Catarina, PPGESE, Joinville, SC, Brazil

 ABSTRACTThis study evaluates IGBT modules with a focus on efficiently measuring their thermalimpedance, a critical factor in reliability assessments. The research employs the Thermo Electric SensitiveParameter method to measure the Virtual Junction Temperature and obtain the Thermal Impedancecurve. These experimental results are compared with datasheet values, using power modules without abaseplate. Two methodologies, dynamic and static, are utilized, both demonstrating consistent performancein evaluating thermal characteristics. The study also addresses the importance of accounting for non-linearity in thermal conductance due to temperature dependency, which is essential for accurate thermalcharacterization. Additionally, it explores the potential for measuring the Thermal Impedance betweenJunction and Case in power modules without a baseplate, offering a comprehensive understanding ofthermal performance.

A Review of Boost Converter Analysis and Design in Aerospace Applications-E. Mattos, A. M. S. S. Andrade, G. V. Hollweg, J. R. Pinheiro and M. L. S. Martins


 Abstract— Often, for simplicity, it is adopted for boost converter inductor and capacitor design the inductor current variation (Δ IL), defining it as an output current percentage. However, this kind of methodology does not guarantee the inductor and capacitor minimum values that assure the converter working on continuous mode operation, discontinuous mode operation, or when it is desired to operate the converter at the boundary between these modes. The aim of this paper is to present a theoretical study of the no-losses boost converter. The principle of operation and static analysis are developed in detail for operation on the following modes: continuous mode operation, discontinuous current mode operation and at the boundary between these modes. During this analysis, all four variables (input and output currents and voltages) are considered as design choices for independent variables that determine the boundary between continuous and discontinuous modes. In addition, a design methodology is presented to illustrate the theoretical procedures, which guarantee the inductor and capacitor minimum values according to the desired operation mode. Finally, the simulation results proof the theoretical analysis.

segunda-feira, 28 de julho de 2025

Radiation resistance properties of electronic devices interacting with different radiation sources Sapienza University of Rome PhD in Accelerator Physics (XXXVI cycle) Beatrice D’Orsi -PhD thesis. Sapienza University of Rome


 Radiation resistance properties of electronic devices interacting with different radiation sources Sapienza University of Rome PhD in Accelerator Physics (XXXVI cycle) 

 Abstract In high-radiation environments, such as those found in high-energy physics, space, and ignition facilities, it is paramount to employ components and devices capable of withstanding the stressful conditions imposed by these harsh settings. To understand the radiation-induced effects and ensure the proper functioning of systems used in these hostile conditions, preliminary tests of the devices against radiation are necessary. In this joint doctoral thesis, comprising work performed at La Sapienza University of Rome, the Institut National de la Recherche Scientifique (INRS) in Canada, and the ENEA Research Centers of Casaccia and Frascati in Italy, a study of radiationinduced damage on electronic devices was carried out. Various radiation sources and characterization methods were employed for this purpose. At the Advanced Laser Light Source (ALLS) laboratory of INRS, laser-accelerated protons with a broad energy spectrum were used to test electronics with a new and innovative stress test source. More conventional sources for irradiation tests, such as 60Co gamma radiation available at the Calliope facility of the ENEA Casaccia R.C., and protons and neutrons from the TOP-IMPLART facility and the Frascati Neutron Generator, respectively, located at the ENEA Frascati R.C., were also used. To further enrich the characterization of the electronic devices, electron irradiations are planned at the REX facility of the ENEA Frascati R.C. To determine the most suitable irradiation conditions at REX, a dosimetric intercalibration between the Calliope facility and the REX facility was performed within the framework of the ASI Supported Irradiation Facilities (ASIF) program. The results of this intercalibration are presented. In the final part of the work, the radiation resistance properties of two types of electronic devices were examined by performing parametric tests on the components before and after irradiation with various radiation sources. Additionally, the Total Ionizing Dose (TID) effect and the displacement damage caused by the Non-Ionizing Energy Loss (NIEL) contribution were analyzed for all the stress tests performed. Specifically, for each radiation source used, the dose deposited by ionizing processes and the dose deposited by non-ionizing processes were calculated. This procedure made it possible to determine the dose required by different types of radiation to cause the same level of damage, allowing a comparison of the irradiation efficiency of laser-driven protons with conventional radiation sources.