How to Bring Solar Energy to Seven Billion People

How to Bring Solar Energy to Seven Billion People-COMO TRAER ENERGIA SOLAR PARA 7 BILLONES DE PERSONAS .

PALESTRA INTERESANTE DO BERKELEY LAB,EL ARTIGO COMPLETO LO ENCUENTRAS EN EL SITE:http://www.rdmag.com/Multimedia/Video/2010/05/energy-how-to-bring-solar-energy-to-seven-billion-people/

PCIM 2010 EUROPE ON VIDEO

PCIM Europe 2010 Video Archive Now Online
From May 4 through 6, Techcast was at the Power Conversion Intelligent Motion (PCIM) Europe 2010 trade show in Nuremberg to record 70 presentations. Online access to the video archive for this international exhibition and conference is now available immediately for a fee.
http://www.techcast.com/en/news/20/62/PCIM-Europe-2010-Video-Archive-Now-Online/

SiC Power Module

The High-temperature SiC Power Module was first marketed via a public press
release and floor demonstration at CEATEC 2008 (Combined Exhibition of
Advanced Technologies), Japan’s premiere electronics trade show. CEATEC took
place September 30–October 4, 2008, in Makuhari, Japan.

Product’s Primary Function
Power electronics modules are the core components of all power electronics
systems. In essence, power electronics systems convert electrical energy from
one form (provided by a source) into another form (consumed by a load). They are
required to drive electric motors (such as those for electric and hybrid vehicles),
convert energy from renewable sources (i.e., solar arrays or wind generators), and
provide power for a wide variety of electronics and electronic systems (DC power
supplies and inverters).
With applications in hybrid and electric vehicles, renewable energy interfaces,
and more-electric aircraft, it reduces size and volume of power electronic
systems by an order of magnitude over present state-of-the-art silicon-based
solutions while simultaneously reducing energy loss by greater than 50 percent and
offering the potential to save $100s of millions.
Our team’s high-temperature silicon carbide power module is the world’s first
commercial high-temperature (250°C) silicon carbide-based power electronics
module. The 50 kW (kilowatt) (1200 V (volt) /150 A (ampere) peak) silicon carbide
(SiC) power modules are rated up to 250°C junction temperature and integrate
high-temperature gate drivers.
Figure 9.1. Exploded view of the high-temperature SiC half-bridge power module.

FULL PAPER IS HERE:http://www.4shared.com/document/YYztmaT9/SIC_Power_Module.html

FOTOGRAFIAS SEPOC 2010-GEPOC-AGOSTO2010

PARABENS AO BRILHANTE EQUIPE DE ENGENHARIA ELETRICA E ELETRONICA,GEPOC PELO MAGNO EVENTO SEPOC 2010,AGRADECIMENTO A TODOS PELA GRANDE ACOGIDA E TRATO GENTIL A MINHA PESSOA,ME SENTI EM FAMILIA,SANTA MARIA E UMA CIDADE MARAVILHOSA O MAIS BONITO E O CALOR HUMANO,AGRADECIMENTOS ESPECIAS AO:
José Renes Pinheiro, Dr.Eng
Prof. Dr. Luciano Schuch (Coordenador Técnico)
Cassiano Rech, Dr.Eng. (Coordenador Geral)
Hélio Leães Hey, Dr.Eng.
Hilton Abílio Gründling, D.Sc.
Humberto Pinheiro, Ph.D.

SEPOC2010 PALESTRA INTERFERENCIA ELECTROMAGNETICA

UNIVERSIDADE FEDERAL DE SANTA MARIA - UFSM - GRUPO DE ELECTRONICA DE POTENCIA-INTERFERENCIA ELECTROMAGNETICA.
APRESENTADOR : ENG. FERNANDO BELTRAME
ORIENTADOR: DR. CASSIANO REICH
ORIENTADOR : DR. LUCIANO SCHUCH